Kinetics of Electron Emission from TGS Crystals Irradiated by X-Rays

2006 ◽  
Vol 334 (1) ◽  
pp. 181-185
Author(s):  
O. V. Rogazinskaya ◽  
S. D. Milovidova ◽  
A. A. Sidorkin ◽  
A. B. Plaksitskii ◽  
V. A. Sidorkin ◽  
...  
Keyword(s):  
X Rays ◽  
1988 ◽  
Vol 8 (11) ◽  
pp. 4716-4720
Author(s):  
A J Fornace ◽  
H Schalch ◽  
I Alamo

Sequence analysis of Chinese hamster V79 lung fibroblast cDNA clones, which code for UV radiation-inducible transcripts, revealed that many of the clones corresponded to metallothioneins (MTs) I and II. A third cDNA clone, DDIU4, was found also to code for a similar-size UV-inducible transcript which was unrelated to MT by both sequence analysis and kinetics of induction. MTI and MTII RNAs rapidly increased in V79 cells within 1 h after UV irradiation, and maximum induction was seen by 4 h. This rapid induction of MT RNA by UV irradiation was not observed in human fibroblasts. MTI and MTII were coordinately induced in both time course and dose-response experiments, although the induction of MTII, up to 30-fold, was three to four times greater than that of MTI. The induction of MT did not appear to be a general stress response, since no increase occurred after exposure to X rays or H2O2.


2008 ◽  
Vol 1 ◽  
pp. 091203 ◽  
Author(s):  
Takeru Okada ◽  
Takashi Furutani ◽  
Toshihiro Yoshioka

1972 ◽  
Vol 14 ◽  
pp. 822-823
Author(s):  
S. R. Kane

Using the measurements of impulsive solar X-rays made with the OGO-5 satellite to identify the flash phase electron acceleration in solar flares of Hα-importance ≲ 1, the satellite and ground based observations are analyzed to study the origin of the different groups of non-thermal electrons responsible for the impulsive X-ray, impulsive microwave, type III radio and interplanetary electron emission.


2006 ◽  
Vol 13 (02n03) ◽  
pp. 155-166 ◽  
Author(s):  
WOLFGANG BRAUN ◽  
KLAUS H. PLOOG

X-rays are ideal to study the structure of crystals due to their weak interaction with matter and in most cases allow a quantitative analysis using kinematical theory. To study the incorporation of atoms during crystal growth and to analyze the kinetics on the crystal surface high primary beam intensities available at synchrotrons are required. Our studies of the molecular beam epitaxy growth of III–V semiconductors reveal that, despite their similarity in crystal structure, the surface kinetics of GaAs (001), InAs (001) and GaSb (001) differ strongly. GaAs shows an unexpectedly large coarsening exponent outside the predicted range of Ostwald ripening models during recovery. GaSb exhibits dramatically different surface morphology variations during growth and recovery. Overgrowth of GaAs by epitaxial MnAs demonstrates the ability of X-ray diffraction to follow an interface as it is buried during heteroepitaxy, which is not possible by reflection high-energy electron diffraction.


2006 ◽  
Vol 519-521 ◽  
pp. 1569-1578
Author(s):  
Dorte Juul Jensen

By 3 dimensional X-ray diffraction (3DXRD) using high energy X-rays from synchrotron sources it is possible to study in-situ the nucleation and growth during recrystallization. In this paper it is described and discussed how 3DXRD can supplement EBSP measurements of nucleation and growth. Three types of studies are considered: i) orientation relationships between nuclei and parent deformed matrix, ii) recrystallization kinetics of individual bulk grains and iii) filming of growing grains in deformed single crystals.


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