Negative surface energy change associated with step formation caused by misfit dislocation nucleation in semiconductor heterostructures

Surface free energy of composite and coatings are critically important for the performance of the materials since the change in surface free energies can drastically affect the physical, chemical and physicochemical properties, and hence the service life of them. The characterization of the surface free energy is the key issue to understand the mechanisms of the surface degradation. Acid-base interaction is one way of determining the surface free energy change on these surfaces. In the present study, we exposed composite and coating surfaces to UV light, and then measured the contact angle values using various liquids (e.g., DI water, diiodomethane and glycerol). Using the van Oss approach, we calculated the surface energy changes of the surfaces exposed to the UV light. We found that the surface energy, acidity and basicity of the composite and coating materials were drastically changed as a function of UV exposure time. This study can be useful for the moisture uptake of composites, composite degradation, aging and service life of these products.

Download Full-text

Asymmetry of misfit-dislocation induced satellite peaks in semiconductor heterostructures

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/32/10a/302 ◽

1999 ◽

Vol 32 (10A) ◽

pp. A8-A11 ◽

Cited By ~ 2

Author(s):

J Leininger ◽

G D U'Ren ◽

C D Moore ◽

R Sandhu ◽

M S Goorsky

Keyword(s):

Misfit Dislocation ◽

Semiconductor Heterostructures

Download Full-text

The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values

Journal of Crystal Growth ◽

10.1016/0022-0248(89)90014-6 ◽

1989 ◽

Vol 94 (2) ◽

pp. 392-404 ◽

Cited By ~ 93

Author(s):

C.G. Tuppen ◽

C.J. Gibbings ◽

M. Hockly

Keyword(s):

Misfit Dislocation ◽

Critical Thickness ◽

Dislocation Nucleation

Download Full-text

The Surface Energy Change of TAC Film Treated by an Atmospheric Pressure Plasma

Journal of the Korean Institute of Illuminating and Electrical Installation Engineers ◽

10.5207/jieie.2009.23.12.184 ◽

2009 ◽

Vol 23 (12) ◽

pp. 184-190

Keyword(s):

Surface Energy ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Energy Change ◽

Pressure Plasma

Download Full-text

Rapid Thermal Processing of Buried Sil−xGex Strained Layers; Photoluminescence Decay and Misfit Dislocation Generation.

MRS Proceedings ◽

10.1557/proc-198-509 ◽

1990 ◽

Vol 198 ◽

Cited By ~ 2

Author(s):

D.C. Houghton ◽

N.L. Rowell

Keyword(s):

Quantum Wells ◽

Misfit Dislocation ◽

Thermal Processing ◽

Internal Quantum Efficiency ◽

Dislocation Nucleation ◽

Multiple Quantum ◽

Misfit Dislocations ◽

Dislocation Generation ◽

Strained Layers ◽

Wide Range

ABSTRACTThe thermal constraints for device processing imposed by strain relaxation have been determined for a wide range of Si-Ge strained heterostructures. Misfit dislocation densities and glide velocities in uncapped Sil-xGex alloy layers, Sil-xGex single and multiple quantum wells have been measured using defect etching and TEM for a range of anneal temperatures (450°C-1000°C) and anneal times (5s-2000s). The decay of an intense photoluminescence peak (∼ 10% internal quantum efficiency ) from buried Si1-xGex strained layers has been correlated with the generation of misfit dislocations in adjacent Sil-xGex /Si interfaces. The misfit dislocation nucleation rate and glide velocity for all geometries and alloy compositions (0<x<0.25) were found to be thermally activated processes with activation energies of (2.5±0.2)eV and (2.3-0.65x)eV, respectively. The time-temperature regime available for thermal processing is mapped out as a function of dislocation density using a new kinetic model.

Download Full-text