A study of grain-boundary structure in non-stoichiometric NiAl by atomistic simulation and electron microscopy

1997 ◽  
Vol 75 (6) ◽  
pp. 1689-1714 ◽  
Author(s):  
Richard W. Fonda ◽  
Min Yan ◽  
David E. Luzzi
2004 ◽  
Vol 818 ◽  
Author(s):  
R. O. Ritchie ◽  
X.-F. Zhang ◽  
L. C. De Jonghe

AbstractThrough control of the grain-boundary structure, principally in the nature of the nanoscale intergranular films, a silicon carbide with a fracture toughness as high as 9.1 MPa.m1/2 has been developed by hot pressing β-SiC powder with aluminum, boron, and carbon additions (ABC-SiC). Central in this material development has been systematic transmission electron microscopy (TEM) and mechanical characterizations. In particular, atomic-resolution electron microscopy and nanoprobe composition quantification were combined in analyzing grain boundary structure and nanoscale structural features. Elongated SiC grains with 1 nm-wide amorphous intergranular films were believed to be responsible for the in situ toughening of this material, specifically by mechanisms of crack deflection and grain bridging. Two methods were found to be effective in modifying microstructure and optimizing mechanical performance. First, prescribed post-annealing treatments at temperatures between 1100 and 1500°C were seen to cause full crystallization of the amorphous intergranular films and to introduce uniformly dispersed nanoprecipitates within SiC matrix grains; in addition, lattice diffusion of aluminum at elevated temperatures was seen to alter grain-boundary composition. Second, adjusting the nominal content of sintering additives was also observed to change the grain morphology, the grain-boundary structure, and the phase composition of the ABC-SiC. In this regard, the roles of individual additives in developing boundary microstructures were identified; this was demonstrated to be critical in optimizing the mechanical properties, including fracture toughness and fatigue resistance at ambient and elevated temperatures, flexural strength, wear resistance, and creep resistance.


2012 ◽  
Vol 18 (S2) ◽  
pp. 346-347
Author(s):  
C. Wade ◽  
M. McLean ◽  
R. Vinci ◽  
M. Watanabe ◽  
L. Giannuzzi

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.


2005 ◽  
Vol 475-479 ◽  
pp. 1673-1676 ◽  
Author(s):  
Isamu Kuchiwaki ◽  
Takahiro Hirabayashi ◽  
Hiroshi Fukushima

Cast polycrystalline silicon for solar cell contains mostly straight twin boundaries which are thought to have little effect on the electrical activity. There are, however, some complicated grain boundaries in it. One of these boundaries consists of slightly curved and straight parts. The structure of this boundary was analyzed to investigate the difference of these two types of boundaries. The conventional transmission electron microscopy (TEM) found that this slightly curved boundary was the zigzag shaped boundary made by (11 _ ,2) and ( _ ,211) planes. High resolution electron microscopy (HREM) confirmed that (11 _ ,2) plane was the boundary of {112} Σ3 twin boundary which formed a straight grain boundary at the other end of the analyzed grain boundary, and also confirmed that ( _ ,2 11) plane was also the boundary of {112} Σ3 twin boundary which intersected with the former twin boundary at an angle of 120 [deg].


Author(s):  
S.E. Babcock

In 1970, an extensive search by transmission electron microscopy (TEM) for evidence of ordered structure in high-angle [001] twist boundaries helped to establish the credibility of the DSC/CSL description of grain boundary structure. In this work, square grids of line contrast were found in boundaries for which the twist misorientation (Θ) was very near the special Σ5+ Σ13 and Σ17 Θ. The lines ran parallel to the primitive translation vectors (b(1) and b(2)) of the appropriate low-Σ DSC lattice, and their spacing correlated well with the spacing predicted by Frank's formula for dislocations with Burgers vectors b(1) and b(2). The images were interpreted as secondary grain boundary dislocation (SGBD) networks. Only for the near-Σ5 case was g•b analysis carried out to show that the line contrast was characteristic of b= 1/10 <310> type screw SGBD's.


1996 ◽  
Vol 458 ◽  
Author(s):  
Yuri Mishin ◽  
Diana Farkas

ABSTRACTUsing embedded atom potentials and molecular statics we calculate the structure and energy of [001] tilt grain boundaries in NiAl for 25 orientations with Σ values from 5 to 185. For three structures (stoichiometric, Ni-rich and Al-rich) of the Σ = 5 (210) boundary we simulate tracer self-diffusion by the vacancy mechanism both parallel and perpendicular to the tilt axis using the Monte Carlo technique. The effective activation energy calculated in a wide temperature range is compared with the spectrum of individual jump energies in the boundary core. The results are interpreted in terms of the grain boundary structure-diffusion relationship and the role of the jump correlation effect in grain boundary diffusion.


1998 ◽  
Vol 13 (12) ◽  
pp. 3449-3452 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Yuichi Ikuhara ◽  
Katsuro Hayashi ◽  
Taketo Sakuma

Grain boundary structure was examined in 0.1 mol% TiO2-excess BaTiO3 by high-resolution electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Their grain boundaries were mostly faceted with {210} type habit. The faceted boundaries were characterized to be associated with an extra Ti–O2 bond with the rutile-like structure. The grain growth behavior in a small TiO2-excess BaTiO3 is discussed from the viewpoint of grain boundary structure.


1971 ◽  
Vol 24 (190) ◽  
pp. 897-909 ◽  
Author(s):  
B. Loberg ◽  
H. Nordén ◽  
D. A. Smith

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