TEM Study of Secondary Grain Boundary Dislocations in Near-∑13, Near-∑17 and Near-∑29 [001] Twist Boundaries in Gold

1985 ◽  
Vol 43 ◽  
pp. 244-245
Author(s):  
S.E. Babcock
Keyword(s):  
Electron Microscopy ◽  
Grain Boundary ◽  
Boundary Structure ◽  
Ordered Structure ◽  
Boundary Dislocation ◽  
High Angle ◽  
Extensive Search ◽  
Grain Boundary Structure ◽  
Transmission Electron ◽  
Twist Boundaries

In 1970, an extensive search by transmission electron microscopy (TEM) for evidence of ordered structure in high-angle [001] twist boundaries helped to establish the credibility of the DSC/CSL description of grain boundary structure. In this work, square grids of line contrast were found in boundaries for which the twist misorientation (Θ) was very near the special Σ5+ Σ13 and Σ17 Θ. The lines ran parallel to the primitive translation vectors (b(1) and b(2)) of the appropriate low-Σ DSC lattice, and their spacing correlated well with the spacing predicted by Frank's formula for dislocations with Burgers vectors b(1) and b(2). The images were interpreted as secondary grain boundary dislocation (SGBD) networks. Only for the near-Σ5 case was g•b analysis carried out to show that the line contrast was characteristic of b= 1/10 <310> type screw SGBD's.

Observations and implications of grain boundary dislocation networks in high-angle YBa2Cu3O7−δ grain boundaries

1990 ◽  
Vol 5 (5) ◽  
pp. 919-928 ◽  
Author(s):  
S. E. Babcock ◽  
D. C. Larbalestier
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Weak Link ◽  
Coincidence Site Lattice ◽  
Boundary Structure ◽  
High Angle ◽  
Grain Boundary Structure ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
Regular Networks

Regular networks of localized grain boundary dislocations (GBDs) have been imaged by means of transmission electron microscopy in three different types of high-angle grain boundaries in YBa2Cu3O7-δ, implying that these boundaries possess ordered structures upon which a significant periodic strain field is superimposed. The occurrence of these GBD networks is shown to be consistent with the GBD/Structural Unit and Coincidence Site Lattice (CSL)/Near CSL descriptions for grain boundary structure. Thus, these dislocations appear to be intrinsic features of the boundary structure. The spacing of the observed GBDs ranged from ∼10 nm to ∼100 nm. These GBDs make the grain boundaries heterogeneous on a scale that approaches the coherence length and may contribute to their weak-link character by producing the “superconducting micro-bridge” microstructure which has been suggested on the basis of detailed electromagnetic measurements on similar samples.

Investigation of Grain Boundary Structure and Composition of Bismuth Embrittled Copper Bicrystals with Aberration-Corrected Scanning Transmission Electron Microscopy

2012 ◽  
Vol 18 (S2) ◽  
pp. 346-347
Author(s):  
C. Wade ◽  
M. McLean ◽  
R. Vinci ◽  
M. Watanabe ◽  
L. Giannuzzi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Scanning Transmission Electron Microscopy ◽  
Boundary Structure ◽  
Scanning Transmission Electron ◽  
Grain Boundary Structure ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Aberration Corrected

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

TEM Studies of Grain Boundary Structure in a Cast Polycrystalline Silicon

2005 ◽  
Vol 475-479 ◽  
pp. 1673-1676 ◽  
Author(s):  
Isamu Kuchiwaki ◽  
Takahiro Hirabayashi ◽  
Hiroshi Fukushima
Keyword(s):  
Electron Microscopy ◽  
Grain Boundary ◽  
Twin Boundary ◽  
Polycrystalline Silicon ◽  
High Resolution Electron Microscopy ◽  
Boundary Structure ◽  
Grain Boundary Structure ◽  
Transmission Electron ◽  
Resolution Electron ◽  
The Difference

Cast polycrystalline silicon for solar cell contains mostly straight twin boundaries which are thought to have little effect on the electrical activity. There are, however, some complicated grain boundaries in it. One of these boundaries consists of slightly curved and straight parts. The structure of this boundary was analyzed to investigate the difference of these two types of boundaries. The conventional transmission electron microscopy (TEM) found that this slightly curved boundary was the zigzag shaped boundary made by (11 _ ,2) and ( _ ,211) planes. High resolution electron microscopy (HREM) confirmed that (11 _ ,2) plane was the boundary of {112} Σ3 twin boundary which formed a straight grain boundary at the other end of the analyzed grain boundary, and also confirmed that ( _ ,2 11) plane was also the boundary of {112} Σ3 twin boundary which intersected with the former twin boundary at an angle of 120 [deg].

Two Investigations into Grain Boundary Structure

1977 ◽  
Vol 35 ◽  
pp. 688-691
Author(s):  
P. Humble
Keyword(s):  
Grain Boundary ◽  
Dark Field ◽  
Boundary Structure ◽  
Boundary Dislocation ◽  
Bright Field ◽  
Intrinsic Structure ◽  
Weak Beam ◽  
Grain Boundary Structure ◽  
Independent Information ◽  
Diffraction Patterns

There has been sustained interest over the last few years into both the intrinsic (primary and secondary) structure of grain boundaries and the extrinsic structure e.g. the interaction of matrix dislocations with the boundary. Most of the investigations carried out by electron microscopy have involved only the use of information contained in the transmitted image (bright field, dark field, weak beam etc.). Whilst these imaging modes are appropriate to the cases of relatively coarse intrinsic or extrinsic grain boundary dislocation structures, it is apparent that in principle (and indeed in practice, e.g. (1)-(3)) the diffraction patterns from the boundary can give extra independent information about the fine scale periodic intrinsic structure of the boundary.In this paper I shall describe one investigation into each type of structure using the appropriate method of obtaining the necessary information which has been carried out recently at Tribophysics.

Microstructures of a-axis oriented YBCO films made by hybrid plasma sputtering

1995 ◽  
Vol 10 (4) ◽  
pp. 803-809 ◽  
Author(s):  
W. Ito ◽  
A. Oishi ◽  
S. Mahajan ◽  
Y. Yoshida ◽  
T. Morishita
Keyword(s):  
Electron Microscopy ◽  
Grain Boundary ◽  
Anisotropic Growth ◽  
Plan View ◽  
Plasma Sputtering ◽  
Transmission Electron ◽  
Hybrid Plasma ◽  
Tilt Boundaries ◽  
Symmetrical Tilt ◽  
Twist Boundaries

Microstructures of a-axis oriented YBa2Cu3O7−x films made by newly developed de 100 MHz hybrid plasma sputtering were investigated using transmission electron microscopy (TEM). The films deposited on (110) NdGaO3 and (100) SrTiO3 substrates were found to grow in a perfect epitaxial fashion and with clear interface. The plan view of the TEM image showed that both films were comprised of two kinds of grains having the c axis aligning along two perpendicular directions in the plane with equal probability. The structures of the grain boundary, however, were found to be very different for the two films from the plan views. The film on NdGaO3 showed a lot of twist boundaries, while the film on SrTiO3 consisted of many symmetrical tilt boundaries and basal-plane-faced tilt boundaries. The type of grain boundary is determined by the anisotropic growth rates of the film between c direction and a-b direction.

Electron Microscopy Study of Stoichiometric and Non-Stoichiometric Titania

1997 ◽  
Vol 3 (S2) ◽  
pp. 669-670
Author(s):  
Solórzano I.G. ◽  
Kotani T. ◽  
Tuller H.L. ◽  
Van der Sande J.B.
Keyword(s):  
Electron Microscopy ◽  
Electric Activity ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Boundary Structure ◽  
High Tc Superconductors ◽  
High Tc ◽  
Grain Boundary Structure ◽  
Transmission Electron ◽  
Crystallographic Shear

It is currently well recognized that oxides are able to accommodate deviations from stoichiometry (1) and great advances in this understanding have been achieved by using transmission electron microscopy (TEM), particularly through lattice imaging and electron diffraction techniques (2). The physical properties of non-stoichiometric oxides are strongly influenced by their exact composition and for this reason they represent a class of materials with increasing and novel properties that are put to use in, for example, oxygen sensors and high-Tc superconductors. On the other hand, in electroceramic materials, such as TiO2, grain boundary structure and chemistry are important to be characterized in detail since these variables are responsible for the electric activity.Rutile (TiO2) can accommodate relatively large deviations from stoichiometry (TiOx with 2.0≥x≤ 1.75) by the crystallographic shear (CS) mechanism (1). The formation of CS planes is effectively a two-step process which involves the ordering of oxygen vacancies on a crystallographic plane and on their elimination by a shear of the lattice.

On the Role of Grain-Boundary Films in Optimizing the Mechanical Properties of Silicon Carbide Ceramics

2004 ◽  
Vol 818 ◽  
Author(s):  
R. O. Ritchie ◽  
X.-F. Zhang ◽  
L. C. De Jonghe
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Grain Boundary ◽  
Elevated Temperatures ◽  
Boundary Structure ◽  
Intergranular Films ◽  
Grain Boundary Structure ◽  
Silicon Carbide Ceramics

AbstractThrough control of the grain-boundary structure, principally in the nature of the nanoscale intergranular films, a silicon carbide with a fracture toughness as high as 9.1 MPa.m1/2 has been developed by hot pressing β-SiC powder with aluminum, boron, and carbon additions (ABC-SiC). Central in this material development has been systematic transmission electron microscopy (TEM) and mechanical characterizations. In particular, atomic-resolution electron microscopy and nanoprobe composition quantification were combined in analyzing grain boundary structure and nanoscale structural features. Elongated SiC grains with 1 nm-wide amorphous intergranular films were believed to be responsible for the in situ toughening of this material, specifically by mechanisms of crack deflection and grain bridging. Two methods were found to be effective in modifying microstructure and optimizing mechanical performance. First, prescribed post-annealing treatments at temperatures between 1100 and 1500°C were seen to cause full crystallization of the amorphous intergranular films and to introduce uniformly dispersed nanoprecipitates within SiC matrix grains; in addition, lattice diffusion of aluminum at elevated temperatures was seen to alter grain-boundary composition. Second, adjusting the nominal content of sintering additives was also observed to change the grain morphology, the grain-boundary structure, and the phase composition of the ABC-SiC. In this regard, the roles of individual additives in developing boundary microstructures were identified; this was demonstrated to be critical in optimizing the mechanical properties, including fracture toughness and fatigue resistance at ambient and elevated temperatures, flexural strength, wear resistance, and creep resistance.

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