Role of the deposition parameters in the uniformity of films produced by the plasma-enhanced chemical vapour deposition technique

1997 ◽  
Vol 76 (3) ◽  
pp. 259-272 ◽  
Author(s):  
R. Martins ◽  
A. Maçarico ◽  
I. Ferreira ◽  
J. Fidalgo ◽  
E. Fortunato
2011 ◽  
Vol 6 (11) ◽  
pp. 1270-1279 ◽  
Author(s):  
Clarence S. Yah ◽  
Geoffrey S. Simate ◽  
Kapil Moothi ◽  
Kwena S. Maphutha ◽  
Sunny E. Iyuke

2013 ◽  
Vol 686 ◽  
pp. 325-330 ◽  
Author(s):  
Esah Hamzah ◽  
Tze Mi Yong ◽  
Kevin Chee Mun Fai

This study analyses residual stress measurement using X-Ray diffraction method on ultrafine-polycrystalline diamonds and polycrystalline diamonds films grown using Hot Filament Chemical Vapour Deposition technique (HFCVD) on silicon nitride(Si3N4) and tungsten carbide (WC) substrates in the same chamber at the same time with varied pretreatments prior to HFCVD diamond deposition. Measurements were taken perpendicular to the surface and the measured residual stress states of the diamond films are in compression. Thus, assuming isotropic properties of the film, the diamond films grown have tension residual stress parallel to the surface of the substrate. Residual stress is estimated to have the lowest stress for substrate that has undergone 5g/liter silicon carbide seeding process. Effects of residual stress to adhesion are discussed for both substrates.


RSC Advances ◽  
2016 ◽  
Vol 6 (33) ◽  
pp. 27852-27861 ◽  
Author(s):  
Muhammad Ali Ehsan ◽  
Rabia Naeem ◽  
Vickie McKee ◽  
Abbas Hakeem Saeed ◽  
Alagarsamy Pandikumar ◽  
...  

An electrochemical nitrite ions sensor electrode, CuO–2TiO2, has been developed using single molecular precursor [Cu2Ti4(O)2(OH)4(TF)8(THF)6]·THF in aerosol assisted chemical vapour deposition technique.


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