Barrier Lowering Effects for Metal-Silicide Schottky Diodes at High Reverse Bias

AbstractIn this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

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Response characteristic of InSb IRFPA under high reverse bias condition

10.1117/12.900335 ◽

2011 ◽

Author(s):

Jun-ming Liu ◽

Qiang Guo ◽

Wei Wang ◽

Zhen-yu Peng

Keyword(s):

Reverse Bias ◽

Response Characteristic ◽

Reverse Bias Condition ◽

Bias Condition ◽

High Reverse Bias

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A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004786 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 577-583

Author(s):

Anand V. Sampath ◽

Mira Misra ◽

Kshitij Seth ◽

Yuri. Fedyunin ◽

Hock M. Ng ◽

...

Keyword(s):

Comparative Study ◽

Reverse Bias ◽

Schottky Diodes ◽

Forward Bias ◽

Etch Pits ◽

Sapphire Substrates ◽

Fabrication And Characterization

In this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

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Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Applied Physics Letters ◽

10.1063/1.5031215 ◽

2018 ◽

Vol 112 (25) ◽

pp. 252104 ◽

Cited By ~ 10

Author(s):

Takuya Maeda ◽

Tetsuo Narita ◽

Masakazu Kanechika ◽

Tsutomu Uesugi ◽

Tetsu Kachi ◽

...

Keyword(s):

Bias Voltage ◽

Reverse Bias ◽

Reverse Bias Voltage ◽

Junction Diode ◽

Franz Keldysh Effect ◽

High Reverse Bias

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Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

Applied Physics Letters ◽

10.1063/1.1554484 ◽

2003 ◽

Vol 82 (8) ◽

pp. 1293-1295 ◽

Cited By ~ 44

Author(s):

E. J. Miller ◽

D. M. Schaadt ◽

E. T. Yu ◽

P. Waltereit ◽

C. Poblenz ◽

...

Keyword(s):

Surface Treatment ◽

Leakage Current ◽

Reverse Bias ◽

Schottky Diodes ◽

Current Reduction ◽

Electrochemical Surface Treatment

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Photoresponse Study of Polycrystalline Diamond thin Film Schottky Diodes

MRS Proceedings ◽

10.1557/proc-339-191 ◽

1994 ◽

Vol 339 ◽

Cited By ~ 3

Author(s):

G. Zhao ◽

T. Stacy ◽

E. M. Charlson ◽

E. J. Charlson ◽

M. Hajsaid ◽

...

Keyword(s):

Reverse Bias ◽

Schottky Barrier Height ◽

Schottky Diodes ◽

Polycrystalline Diamond ◽

Photoelectric Method ◽

Surface Reflection ◽

Diamond Thin Film ◽

Boron Doped ◽

Hot Filament Cvd ◽

Hot Filament

ABSTRACTWe are reporting the first quantitative photoresponse characteristics of boron doped hot-filament CVD (HFCVD) diamond based Schottky diodes using semi-transparent aluminum contacts in the spectral range of 300–1050 nm. Quantum efficiencies, obtained without correction for surface reflection in the visible and near UV region, were between 5 % and 10% when the diodes were unbiased. Effect of reverse bias on the photoresponse was investigated at selected photon energies. Reverse biased diodes exhibit increasing photoresponse and ultimately saturation. Quantum efficiency as high as 30% was also obtained at 500 nm, when a reverse bias of over I volt was applied. The photoresponse mechanism of CVD diamond Schottky diodes is also discussed. A Schottky barrier height of 1.15 ± 0.02 eV for Al-HFCVD diamond contacts was determined using the d.c. photoelectric method.

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