Response characteristic of InSb IRFPA under high reverse bias condition

2011 ◽  
Author(s):  
Jun-ming Liu ◽  
Qiang Guo ◽  
Wei Wang ◽  
Zhen-yu Peng
Keyword(s):  
Reverse Bias ◽  
Response Characteristic ◽  
Reverse Bias Condition ◽  
Bias Condition ◽  
High Reverse Bias

scholarly journals How the absorber thickness influences the formation of reverse bias induced defects in CIGS solar cells

2020 ◽  
Vol 11 ◽  
pp. 9
Author(s):  
Klaas Bakker ◽  
Alix Rasia ◽  
Suzanne Assen ◽  
Basma Ben Said Aflouat ◽  
Arthur Weeber ◽  
...  
Keyword(s):  
Solar Cells ◽  
Shade Tolerance ◽  
Reverse Bias ◽  
Absorber Thickness ◽  
Pv Module ◽  
Cigs Solar Cells ◽  
Induced Defects ◽  
Reverse Bias Condition ◽  
Bias Condition ◽  
Number Of Cells

When a PV module is partially shaded, the shaded solar cells operate in a reverse bias condition. For Cu(In,Ga)Se2 cells this condition can cause defects that irreversibly reduce the output of these cells and the full module. In order to design robust shade-tolerant CIGS modules details need to be known of the conditions at which these defects will be formed. In this study a large number of cells were exposed to different reverse bias conditions. By using simple statistics the probability of the occurrence of defects as a result of reverse bias at any given voltage has been determined. Based on our experiments we have found that the absorber thickness is one of the main parameters that affects the shade-tolerance: the thicker the absorber, the more shade tolerant the CIGS module will be.

Recombination Dynamics of Self-Trapped Excitons in the High-Efficient Blue LEDs under Reverse Bias Condition

1999 ◽  
Author(s):  
Tsunemasa Taguchi ◽  
Hiromitsu Kudo ◽  
Hiroki Ishibashi ◽  
Ruisheng Zheng ◽  
Yoichi Yamada
Keyword(s):  
Reverse Bias ◽  
High Efficient ◽  
Reverse Bias Condition ◽  
Bias Condition ◽  
Recombination Dynamics

Barrier Lowering Effects for Metal-Silicide Schottky Diodes at High Reverse Bias

EPE Journal ◽  
1998 ◽  
Vol 7 (3-4) ◽  
pp. 7-11 ◽  
Author(s):  
C. Furio ◽  
G. Charitat ◽  
A. Lhoite ◽  
J.M. Dilhac
Keyword(s):  
Reverse Bias ◽  
Schottky Diodes ◽  
Metal Silicide ◽  
High Reverse Bias

scholarly journals Reverse biased nanocrystalline graphite (NCG)/p-Si schottky junction for methane gas sensor

2019 ◽  
Vol 15 (3) ◽  
pp. 1217
Author(s):  
A. A. Nawawi ◽  
S.M. Sultan ◽  
S.F.A. Rahmah ◽  
P.I. Khalid ◽  
S.H. Pu
Keyword(s):  
Barrier Height ◽  
Reverse Bias ◽  
Forward Bias ◽  
Schottky Contact ◽  
Schottky Junction ◽  
Methane Gas ◽  
Nanocrystalline Graphite ◽  
Current Shift ◽  
Metal Surface Layer ◽  
Bias Condition

An investigation on the effect of the reverse biased operation of NCG/p-Si Schottky contact during methane gas exposure at room temperature has been presented. The experimental results show the larger current shift at the reverse bias operation, compared to the forward bias by exposing to methane gas. This can be attributed to the adsorption of methane gas into the metal surface layer and produces a negative charge at the junction, thus reduces the barrier height of the device. The reverse barrier height was calculated under the reverse bias condition, demonstrated the value decreased from 0.58-0.53eV towards a higher concentration of methane gas. The Schottky junction also affected by the increase in a free carrier when exposure to the reducing gas such as methane. Raman spectra are reported to be detected at G, D and 2D band with the grain size 1.88nm to exhibit single crystallite graphite properties. The results correlate well with the 3D AFM scans reveal the RMS surface roughness of 1.1 to 2.8nm.

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

2018 ◽  
Vol 112 (25) ◽  
pp. 252104 ◽  
Author(s):  
Takuya Maeda ◽  
Tetsuo Narita ◽  
Masakazu Kanechika ◽  
Tsutomu Uesugi ◽  
Tetsu Kachi ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Reverse Bias ◽  
Reverse Bias Voltage ◽  
Junction Diode ◽  
Franz Keldysh Effect ◽  
High Reverse Bias

High Electric Field Forming of a-Si:H P-I-N Diodes

1995 ◽  
Vol 377 ◽  
Author(s):  
A. Ilie ◽  
B. Equer ◽  
T. Pochet
Keyword(s):  
Electric Field ◽  
Density Of States ◽  
Reverse Bias ◽  
Spectral Response ◽  
Reverse Current ◽  
Small Decrease ◽  
Forming Process ◽  
Dopant Activation ◽  
Long Period ◽  
High Reverse Bias

ABSTRACTAmorphous hydrogenated p-i-n diodes submitted to a high reverse bias for a long period of time undergo a metastable evolution which tends to improve their properties. A forming procedure based on this effect has been developed and leads to a significant decrease of the reverse current and increase of the breakdown voltage. In this paper, the mechanisms underlying this forming process have been investigated using the Constant Photocurrent Method (CPM), (I-V) characteristics and Spectral Response under reverse bias. The effects of annealing and current induced defect creation have been studied. The forming process is found to be most consistent with a metastable increase in the dopant activation of the p-layer and a small decrease of the density of states in the i-layer.

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