scholarly journals Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

2003 ◽  
Vol 82 (8) ◽  
pp. 1293-1295 ◽  
Author(s):  
E. J. Miller ◽  
D. M. Schaadt ◽  
E. T. Yu ◽  
P. Waltereit ◽  
C. Poblenz ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Current Reduction ◽  
Electrochemical Surface Treatment

scholarly journals Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
P. Pipinys ◽  
V. Lapeika
Keyword(s):  
Temperature Dependence ◽  
Leakage Current ◽  
Reverse Bias ◽  
Electron Tunneling ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Model Temperature

Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K) using for calculation the effective mass of 0.222 . and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy) are also explicable in the framework of the PhAT model.

Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

2018 ◽  
Vol 57 (4) ◽  
pp. 040302 ◽  
Author(s):  
Tetsuro Hayashida ◽  
Takuma Nanjo ◽  
Akihiko Furukawa ◽  
Tatsuro Watahiki ◽  
Mikio Yamamuka
Keyword(s):  
Leakage Current ◽  
Schottky Diodes ◽  
Anode Process ◽  
Current Reduction

Si1-xCx/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current

2015 ◽  
Vol 821-823 ◽  
pp. 571-574
Author(s):  
Gerard Colston ◽  
Maksym Myronov ◽  
Stephen Rhead ◽  
Vishal A. Shah ◽  
Yogesh Sharma ◽  
...  
Keyword(s):  
Power Electronics ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Schottky Diode ◽  
High Power ◽  
Reverse Bias ◽  
Lattice Mismatch ◽  
Schottky Diodes ◽  
Crystalline Quality ◽  
The Impact

Vertical Schottky diodes have been fabricated on low C content Si1-xCxand 3C-SiC epilayers epitaxially grown on Si(001) substrates. Significant leakage current was observed in 3C-SiC diodes under reverse bias, masking any rectifying behavior. This issue is far less pronounced in Si1-xCxbased Schottky diodes which demonstrate a clear critical breakdown. Leakage current is shown to be greater in relaxed Si1-xCxlayers. While crystalline Si1-xCxis not currently a viable material for high power electronics it is useful for assessing the impact lattice mismatch and crystalline quality has on the behavior of rectifiers.

Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

2015 ◽  
Vol 15 (9) ◽  
pp. 1027-1031 ◽  
Author(s):  
Hyeonseok Woo ◽  
Jongkyong Lee ◽  
Yongcheol Jo ◽  
Jaeseok Han ◽  
Jongmin Kim ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diodes ◽  
Cap Layer ◽  
Current Reduction

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

2018 ◽  
Vol 28 (8) ◽  
pp. 440-444
Author(s):  
Kwang-Jin Lee ◽  
◽  
Doyeon Kim ◽  
Duck-Kyun Choi ◽  
Woo-Byoung Kim
Keyword(s):  
Leakage Current ◽  
Chemical Cleaning ◽  
Cleaning Method ◽  
Current Reduction
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