NUMERICAL SIMULATION OF HEAT TRANSPORT AND FLUID FLOW IN DIRECTIONAL CRYSTAL GROWTH OF GaAs

1996 ◽  
Vol 30 (7) ◽  
pp. 685-701 ◽  
Author(s):  
Minwu Yao ◽  
David H. Matthiesen ◽  
Arnon Chait
Keyword(s):  
Numerical Simulation ◽  
Fluid Flow ◽  
Crystal Growth ◽  
Heat Transport

Finite Element Modeling of Silicon Transport into Germanium Using a Simplified Crystal Growth Technique

2011 ◽  
Vol 312-315 ◽  
pp. 240-247
Author(s):  
Farid Mechighel ◽  
Mohammed El Ganaoui ◽  
Bernard Pateyron ◽  
Mahfoud Kadja ◽  
S. Dost
Keyword(s):  
Numerical Simulation ◽  
Finite Element Method ◽  
Finite Element ◽  
Fluid Flow ◽  
Crystal Growth ◽  
Concentration Profile ◽  
Similar Material ◽  
Growth Technique ◽  
Vertical Bridgman ◽  
Growth Methods

A numerical simulation study, using finite element method, was carried out to examine the temperature and concentration fields in the dissolution process of silicon into germanium melt. This work utilized a simplified configuration which may be considered to be similar material configuration to that used in the Vertical Bridgman growth methods. The concentration profile for the Si-Ge sample processed using this technique shows increasing transport silicon into the melt with time, moreover, a flat stable interface is observed. The mass and momentum equations for fluid flow, the energy and the solute mass transport were numerically solved. Results showed good agreements with experiments.

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