Finite Element Modeling of Silicon Transport into Germanium Using a Simplified Crystal Growth Technique
2011 ◽
Vol 312-315
◽
pp. 240-247
Keyword(s):
A numerical simulation study, using finite element method, was carried out to examine the temperature and concentration fields in the dissolution process of silicon into germanium melt. This work utilized a simplified configuration which may be considered to be similar material configuration to that used in the Vertical Bridgman growth methods. The concentration profile for the Si-Ge sample processed using this technique shows increasing transport silicon into the melt with time, moreover, a flat stable interface is observed. The mass and momentum equations for fluid flow, the energy and the solute mass transport were numerically solved. Results showed good agreements with experiments.
1989 ◽
Vol 9
(4)
◽
pp. 453-492
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Keyword(s):
2019 ◽
Vol 14
(13)
◽
pp. 3036
Keyword(s):
2018 ◽
Vol 15
(07)
◽
pp. 1850057
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2007 ◽
Vol 71
(1)
◽
pp. 25-46
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Keyword(s):
2019 ◽
Vol 1392
◽
pp. 012075
2020 ◽
Vol 65
(1)
◽
pp. 51-58
2019 ◽
Keyword(s):