Inverse Capacitance-Voltage Characteristics of Bi3.25La0.75Ti3O12 Thin Film Pulsed Laser Deposited on Thermally Oxidized n-Type Si Substrates

2004 ◽  
Vol 65 (1) ◽  
pp. 175-182 ◽  
Author(s):  
EUNJUNG KO ◽  
JAEMOON PAK ◽  
KUANGWOO NAM ◽  
GWANGSEO PARK
Keyword(s):  
Thin Film ◽  
Pulsed Laser ◽  
Si Substrates ◽  
Capacitance Voltage

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

Preparation and Optical Properties of Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Film on Si Substrates with Buffer Layer Using Pulsed Laser Deposition

2006 ◽  
Vol 301 ◽  
pp. 265-268 ◽  
Author(s):  
Naru Nemoto ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Takanori Kiguchi ◽  
Keisuke Satoh ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Columnar Structure ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Zero Bias ◽  
Si Substrates ◽  
Prism Coupler ◽  
Pt Films

Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers. The PMN-PT/SrRuO3/SrTiO3/(La,Sr)CoO3/CeO2 /YSZ/Si hetrostructure was fabricated by pulsed laser deposition. A PMN-PT thin film with a thickness of 2μm was successfully deposited. The optical characteristics of PMN-PT epitaxial film were measured by prism coupling method. The morphology of the PMN-PT films was drastically improved by introducing a mask between the target and substrate during the deposition. The PMN-PT thin film showed a columnar structure, where the width of each column was approximately 180nm. A refractive index of 2.48 with zero bias voltage was obtained for the epitaxial PMN-PT thin film using the prism coupler method.

Highly c-axis oriented LiNbO3 thin film grown on SiO2/Si substrates by pulsed laser deposition

2002 ◽  
Vol 55 (4) ◽  
pp. 265-268 ◽  
Author(s):  
Zhizhen Ye ◽  
Junhui He ◽  
Longfei Ye ◽  
Binghui Zhao ◽  
Wenchuan Weng ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrates

Properties of Na0.5Bi0.5TiO3-SrTiO3 Ferroelectric Thin Films Prepared by a Modified MOSD Process

2017 ◽  
Vol 744 ◽  
pp. 417-421
Author(s):  
Ya Ping Wang ◽  
Zhuo Wang ◽  
Da Ji Li ◽  
Ya Nan Cui ◽  
Zhi Juan Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Deposition Process ◽  
Solution Deposition ◽  
Si Substrates ◽  
Capacitance Voltage ◽  
Surface Microstructures ◽  
Switching Mode

0.82NBT-0.18ST and 0.85NBT-0.15ST thin films have been prepared on Si substrates by a modified metalorganic solution deposition process. To achieve films with better ferroelectric properties, three main items have been changed in the process. Then the crystal structures, surface microstructures, hysteresis loops, fatigue curves and capacitance-voltage curves of the films were measured. It can be found that NBT-ST films can crystallize well after annealing at 650 °C for 5 minutes and have smooth surface microstructures. The 0.85NBT-0.15ST thin films exhibit better well-defined hysteresis loops than 0.82NBT-0.18ST, with a remnant polarization of 1.1 mC/cm2 and a coercive fields of 44.2 kV/cm. The clockwise C-V curves show that they have a desired polarization-type switching mode. The memory window of 0.82NBT-0.18ST thin film is about 1.8V, and that of 0.85NBT-0.15ST thin film is about 2.5V.

scholarly journals STUDY OF THE COMPOSITION OF GaAsBi FILMS OBTAINED BY PULSED LASER

2021 ◽  
pp. 96-105
Author(s):  
Олег Васильевич Девицкий ◽  
Александр Александрович Кравцов ◽  
Игорь Александрович Сысоев
Keyword(s):  
Thin Film ◽  
Phonon Mode ◽  
Pulsed Laser ◽  
Photoluminescence Spectra ◽  
Energy Dispersive Analysis ◽  
Si Substrate ◽  
Si Substrates ◽  
Gaas Substrates ◽  
First Time ◽  
Maximum Content

Методом одноосного холодного прессования были изготовлены мишени GaAsBi с содержанием Bi 1 и 22%. Из полученных мишеней впервые было проведено импульсное лазерное напыления тонких пленок GaAsBi на подложках GaAs и Si. Были исследованы состав, спектры комбинационного рассеяния и фотолюминесценции тонких пленок GaAsBi, полученных из мишеней с содержанием Bi 1 и 22%. По данным спектров фотолюминесценции тонких пленок GaAsBi на подложках GaAs определено, максимальное содержание Bi в пленках не превышает 2,7 %. Полученные результаты хорошо коррелируют с результатами энергодисперсионного анализа, состав пленок, полученных из мишеней с содержанием Bi 1 и 22% - GaAs Bi и GaAsBi. Установлено, что фононная мода LO (GaBi). связанная с нарушением упорядоченности при смешении фаз GaAs и GaBi, находиться на частоте 181 см. Для тонкой пленки, полученной на подложке Si наблюдалась мода LO (GaAs), которая менее выражена и смещена на 3 см влево, в то время как запрещенная правилами отбора мода TO (GaAs) имеет более высокую интенсивность и ее смещение составляет около 1 см относительно частоты TO (GaAs) моды тонкой пленки, полученной на подложке GaAs . Uniaxial cold pressing was used to fabricate the GaAsBi targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAsBi thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin GaAsBi films obtained from targets with 1 and 22 % of Bi. According to the photoluminescence spectra of thin GaAsBi films on GaAs substrates, it was determined that the maximum content of Bi in the films did not exceed 2,7 %. The results obtained well correlate with the results of the energy dispersive analysis, the composition of films obtained from targets with the Bi content of 1 and 22% - GaAs Bi and GaAsBi. It was found that the LO(GaBi) phonon mode of associated with disordering during mixing of GaAs and GaBi phases to be at a frequency of 181 cm. For the thin film obtained on the Si substrate, the mode LO (GaAs) was observed that was less pronounced and shifted by 3 cm to the left, while the mode TO (GaAs), forbidden by the selection rules, had a higher intensity and its shift was of about 1 cm relative to the frequency of the mode TO (GaAs) of the thin film obtained on the GaAs substrate.

Deposition of BaTi2O5 Films on Si Substrates by Using MgO Buffers

2012 ◽  
Vol 508 ◽  
pp. 189-192
Author(s):  
L. Li ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Si Substrates ◽  
Partial Pressures ◽  
Deposited Films

Using the (100)-Oriented MgO Thin Film as the Buffer Layer, BaTi2O5 Films Were Deposited on Si(100) Substrates by Pulsed Laser Deposition under Various Oxygen Partial Pressures (PO2). the Effects of PO2 on the Crystal Phase, Orientation and Surface Morphology of the as-Deposited Films Were Investigated. Single-Phased Bati2o5 Films Were Obtained at PO2 = 10-15 Pa, and the Preferred Orientation Changed from (710) to (020) with Decreasing PO2. at PO2 = 10 Pa, the BaTi2O5 Films with a Higher Degree of bItalic text-Axis Orientation and a Dense Texture Were Deposited on the Mgo(100)/Si(100) Substrates. The MgO Buffers Played an Important Role as Structural Templates for the Textured Growth of BaTi2O5 Films on Si Substrates.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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