scholarly journals STUDY OF THE COMPOSITION OF GaAsBi FILMS OBTAINED BY PULSED LASER

2021 ◽  
pp. 96-105
Author(s):  
Олег Васильевич Девицкий ◽  
Александр Александрович Кравцов ◽  
Игорь Александрович Сысоев
Keyword(s):  
Thin Film ◽  
Phonon Mode ◽  
Pulsed Laser ◽  
Photoluminescence Spectra ◽  
Energy Dispersive Analysis ◽  
Si Substrate ◽  
Si Substrates ◽  
Gaas Substrates ◽  
First Time ◽  
Maximum Content

Методом одноосного холодного прессования были изготовлены мишени GaAsBi с содержанием Bi 1 и 22%. Из полученных мишеней впервые было проведено импульсное лазерное напыления тонких пленок GaAsBi на подложках GaAs и Si. Были исследованы состав, спектры комбинационного рассеяния и фотолюминесценции тонких пленок GaAsBi, полученных из мишеней с содержанием Bi 1 и 22%. По данным спектров фотолюминесценции тонких пленок GaAsBi на подложках GaAs определено, максимальное содержание Bi в пленках не превышает 2,7 %. Полученные результаты хорошо коррелируют с результатами энергодисперсионного анализа, состав пленок, полученных из мишеней с содержанием Bi 1 и 22% - GaAs Bi и GaAsBi. Установлено, что фононная мода LO (GaBi). связанная с нарушением упорядоченности при смешении фаз GaAs и GaBi, находиться на частоте 181 см. Для тонкой пленки, полученной на подложке Si наблюдалась мода LO (GaAs), которая менее выражена и смещена на 3 см влево, в то время как запрещенная правилами отбора мода TO (GaAs) имеет более высокую интенсивность и ее смещение составляет около 1 см относительно частоты TO (GaAs) моды тонкой пленки, полученной на подложке GaAs . Uniaxial cold pressing was used to fabricate the GaAsBi targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAsBi thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin GaAsBi films obtained from targets with 1 and 22 % of Bi. According to the photoluminescence spectra of thin GaAsBi films on GaAs substrates, it was determined that the maximum content of Bi in the films did not exceed 2,7 %. The results obtained well correlate with the results of the energy dispersive analysis, the composition of films obtained from targets with the Bi content of 1 and 22% - GaAs Bi and GaAsBi. It was found that the LO(GaBi) phonon mode of associated with disordering during mixing of GaAs and GaBi phases to be at a frequency of 181 cm. For the thin film obtained on the Si substrate, the mode LO (GaAs) was observed that was less pronounced and shifted by 3 cm to the left, while the mode TO (GaAs), forbidden by the selection rules, had a higher intensity and its shift was of about 1 cm relative to the frequency of the mode TO (GaAs) of the thin film obtained on the GaAs substrate.

Preparation and Growth of Pb2Sr2Y0.5Ca0.5Cu3O8+δ Thin Film Superconductors

1992 ◽  
Vol 285 ◽  
Author(s):  
S.H.H. Naqvi ◽  
M. Vickers ◽  
S. Tarling ◽  
P. Barnes ◽  
I.W. Boyd
Keyword(s):  
Thin Film ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Ex Situ ◽  
Dc Resistivity ◽  
Basic Set ◽  
Zero Resistance ◽  
Van Der Pauw ◽  
First Time

ABSTRACTThe lead based superconductor Pb2Sr2Y0.5Ca0.5Cu3O8+δ is a most complex material. If any oxygen is present in the PbO-CuOδ-PbO sandwich layer (i.e. if δ>0) the superconductivity deteriorates. This is also a most difficult material to grow not only because of the large number of cation stoichiometries which have to be precisely balanced but also because of the tendency for multiple phases to form. Pulsed laser deposition (PLD) has been applied to prepare thin films of the 2213-phase on MgO (100) single crystal substrates at low temperature (300°C) in low oxidizing atmospheres. A basic set of ex-situ growth conditions has been determined which produce for the first time good quality films of this material as characterized by DC resistivity using the Van der Pauw method, as well as EDX and XRD. The layers are reasonably c-axis oriented and display a superconducting onset transition temperature of 79K and zero resistance at 65K after subsequent annealing in a nitrogen ambient.

Monolithic Integration of Si and GaAs Devices

1986 ◽  
Vol 67 ◽  
Author(s):  
H. K. Choi ◽  
G. W. Turner ◽  
B-Y. Tsaur ◽  
T. H. Windhorn
Keyword(s):  
Monolithic Integration ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Gaas Devices ◽  
Voltage Pulses ◽  
First Time

ABSTRACTIntegration of Si MOSFETs with GaAs MESFETs and with GaAs/AlGaAs double-heterostructure LEDs on monolithic GaAs/Si substrates is reported. Both Si MOSFETs and GaAs MESFETs show characteristics comparable to those for devices fabricated on separate Si and GaAs substrates. In LED/MOSFET integration, the cathode of each LED is connected with the drain of a MOSFET. This is the first time that Si and GaAs devices have been monolithically interconnected. LED modulation rates up to 27 Mbps have been achieved by applying a stream of voltage pulses to the MOSFET gate.

scholarly journals The Effect of Strontium Doping on LaFeO3 Thin Films Deposited by the PLD Method

Catalysts ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 954
Author(s):  
Anna Cyza ◽  
Łukasz Cieniek ◽  
Tomasz Moskalewicz ◽  
Wojciech Maziarz ◽  
Jan Kusiński ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Catalytic Properties ◽  
Pulsed Laser ◽  
Grain Morphology ◽  
Laser Deposition ◽  
Si Substrate ◽  
Tem Analysis ◽  
Small Grains

The aim of the presented investigations was to deposit the thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) on (100) Si substrate by using the Pulsed Laser Deposition (PLD) method. Structure was exanimated by using XRD, SEM, AFM, TEM and XPS methods. The catalytic properties were analyzed in 4 ppm acetone atmosphere. The doping of Sr thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) resulted in a decrease in the size of the crystallites, the volume of the elemental cell and change in the grain morphology. In the LaFeO3 and La0.9Sr0.1FeO3, clusters around which small grains grow are visible in the structure, while in the layer La0.8Sr0.2FeO3, the visible grains are elongated. The TEM analysis has shown that the obtained thin films had a thickness in the range 150–170 nm with triangular or flat column ends. The experiment performed in the presence of gases allowed us to conclude that the surfaces (101/020) in the triangle-shaped columns and the plane (121/200) faces in flat columns were exposed to gases. The best properties in the presence of CH3COCH3 gas were noted for LaFeO3 thin film with triangle columns ending with orientation (101/020).

Inverse Capacitance-Voltage Characteristics of Bi3.25La0.75Ti3O12 Thin Film Pulsed Laser Deposited on Thermally Oxidized n-Type Si Substrates

2004 ◽  
Vol 65 (1) ◽  
pp. 175-182 ◽  
Author(s):  
EUNJUNG KO ◽  
JAEMOON PAK ◽  
KUANGWOO NAM ◽  
GWANGSEO PARK
Keyword(s):  
Thin Film ◽  
Pulsed Laser ◽  
Si Substrates ◽  
Capacitance Voltage

Preparation and Optical Properties of Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Film on Si Substrates with Buffer Layer Using Pulsed Laser Deposition

2006 ◽  
Vol 301 ◽  
pp. 265-268 ◽  
Author(s):  
Naru Nemoto ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Takanori Kiguchi ◽  
Keisuke Satoh ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Columnar Structure ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Zero Bias ◽  
Si Substrates ◽  
Prism Coupler ◽  
Pt Films

Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers. The PMN-PT/SrRuO3/SrTiO3/(La,Sr)CoO3/CeO2 /YSZ/Si hetrostructure was fabricated by pulsed laser deposition. A PMN-PT thin film with a thickness of 2μm was successfully deposited. The optical characteristics of PMN-PT epitaxial film were measured by prism coupling method. The morphology of the PMN-PT films was drastically improved by introducing a mask between the target and substrate during the deposition. The PMN-PT thin film showed a columnar structure, where the width of each column was approximately 180nm. A refractive index of 2.48 with zero bias voltage was obtained for the epitaxial PMN-PT thin film using the prism coupler method.

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers

Nanoscale ◽  
2017 ◽  
Vol 9 (32) ◽  
pp. 11504-11510 ◽  
Author(s):  
Dezhong Cao ◽  
Hongdi Xiao ◽  
Qingxue Gao ◽  
Xiaokun Yang ◽  
Caina Luan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quartz Substrate ◽  
Photoelectrochemical Properties ◽  
Si Substrate ◽  
Photoelectrochemical Performance ◽  
Si Substrates

The mesoporous GaN-based thin films were transferred onto quartz and n-Si substrates. Compared to the film on quartz substrate, the film on n-Si substrate exhibited better photoelectrochemical performance.

Laser-Induced Thermoelectric Voltage in La0.5Pr0.5MnO3 Thin Film

2011 ◽  
Vol 287-290 ◽  
pp. 2248-2251
Author(s):  
Qian Qian Hua ◽  
Li Sheng Zhang ◽  
Pei Jie Wang
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Colossal Magnetoresistance ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thermoelectric Voltage ◽  
First Time

The laser-induced thermoelectric voltage was observed for the first time in praseodymium doped LaMnO3 thin film grown on LaAlO3 single crystal vicinal cut substrates by pulsed laser deposition. The experimental data for La0.5Pr0.5MnO3 showed a good liner relation between the voltage and the laser energy. The result suggested that the anisotropic Seebeck effect were responsible for the voltage signals in colossal magnetoresistance manganites thin film.

Conductive LaNiO3 Electrode Grown by Pulsed Laser Ablation on Si Substrate

1997 ◽  
Vol 12 (4) ◽  
pp. 931-935 ◽  
Author(s):  
Li Sun ◽  
Tao Yu ◽  
Yan-Feng Chen ◽  
Jun Zhou ◽  
Nai-Ben Ming
Keyword(s):  
Laser Ablation ◽  
Metalorganic Chemical Vapor Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Pulsed Laser Ablation ◽  
Si Substrate ◽  
Si Substrates ◽  
Electron Probe Microanalyzer ◽  
Promising Electrode Material ◽  
Si Wafer

Using the pulsed laser ablation (PLA) technique, conductive LaNiO3 thin films have been successfully grown on (001) Si substrates. The XRD θ-2θ scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer (EPMA) investigations show that the three elements La, Ni, and O distribute uniformly in the films. The resistivity of the as-deposited LaNiO3 films display a metallic character. Polycrystalline PbTiO3films are deposited by metalorganic chemical vapor deposition (MOCVD) on these LaNiO3 electrodes. Ferroelectricity measurements of the PbTiO3/LaNiO3 heterostructure prove LaNiO3 to be a promising electrode material in the integration of ferroelectrics and Si wafer.

Growth of epitaxial ZnO thin film by oxidation of epitaxial ZnS thin films on Si(111)

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3861-3864
Author(s):  
A. Miyake ◽  
H. Kominami ◽  
T. Aoki ◽  
H. Tatsuoka ◽  
H. Kuwabara ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Epitaxial Films ◽  
Driving Voltage ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Ultraviolet Emission ◽  
Near Ultraviolet ◽  
Novel Method ◽  
First Time

The growth of epitaxial ZnO thin film on Si substrate by the oxidation of epitaxial ZnS film is a novel method and we are reporting this first time. The merits of the use of Si substrate are to make driving voltage in LED lower and less expensive than sapphire substrate. In this study, the epitaxial ZnO thin film could be successfully grown on the Si substrate. The epitaxial films showed a strong near ultraviolet emission peaked at around 3.32 eV at room temperature under 325 nm excitation.

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