Deconvolution of temperature dependence of conductivity, its reduced activation energy, and Hall-effect data for analysing impurity conduction in n-ZnSe

2020 ◽  
Vol 100 (15) ◽  
pp. 2018-2039 ◽  
Author(s):  
Yasutomo Kajikawa
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Effect Data ◽  
Temperature Dependence Of Conductivity ◽  
Impurity Conduction

Anomalous Hall Effect in (Co41Fe39B20)x(Al–O)100-x Nanocomposites: Temperature Dependence

2015 ◽  
Vol 233-234 ◽  
pp. 403-406 ◽  
Author(s):  
Yuriy O. Mikhailovsky ◽  
Valery N. Prudnikov ◽  
Konstantin Yu. Chernoglazov ◽  
Vladimir V. Rylkov ◽  
Sergey N. Nikolaev ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Exponential Law ◽  
Temperature Dependence Of Conductivity

We present our last results on anomalous Hall effect (AHE) in (Co41Fe39B20)x(Al–O)100-x nanocomposites focusing on the possible correlation between temperature dependence of AHE and resistivity. It is shown that the temperature dependence of conductivity G=1/Rxx, where Rxx is resistivity, for compositions with x=49-56% at 10K<T<Tk follows the relation, where the parameters A, , Tk depend on x. For x=47% this relation changes to the exponential law “1/2” Rxx ∝ exp (Т0/T)1/2. The correlation between AHE resistivity RH (T) and resistivity Rxx (T) can be described as RH ∝ (Rxx)m , where m increases from 0.38 to 0.58 with an increase of x from 49 to 56 %.

scholarly journals Conduction Mechanism in Electrically Conducting Polymers

2018 ◽  
Vol 14 (4) ◽  
Author(s):  
Daniel Gochnauer ◽  
T Gilani
Keyword(s):  
Activation Energy ◽  
Conducting Polymers ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Conduction Mechanism ◽  
Localized States ◽  
Electrically Conducting ◽  
Temperature Dependence Of Conductivity ◽  
Electrically Conducting Polymers ◽  
Hopping Model

The conduction mechanism in conducting polymers is reviewed and experimental results of temperature dependence of electrical conductivity of PF6 doped polypyrrole in temperature range of 77 to 300 K are discussed. The room-temperature conductivitywas experimentally determined to be 73 ± 3.4 S/m and temperature dependence follows the Mott’s variable range hopping model. The average hopping distance at 298 K was (6.75 ± 0.97) ×10-8 cm. The coefficient of decay of the localized states, the density states at the Fermi level, and the hopping activation energy were calculated to be (3.5±0.51) ×107 cm-1, (1.92 ± 0.83) ×1022 cm-3 eV-1, and 0.040 ± 0.001 eV respectively. KEYWORDS: Electrically Conducting Polymers; Doped Polypyrrole; Temperature Dependence of Conductivity; Hopping Activation Energy; Density of State at Fermi level

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Temperature Dependence of Conductivity in Conjugated Polymers Doped by Carbon Nanotubes

2017 ◽  
Vol 9 (5) ◽  
pp. 05011-1-05011-5 ◽  
Author(s):  
О. І. Konopelnyk ◽  
◽  
О. І. Aksimentyeva ◽  
Yu. Yu. Horbenko ◽  
◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Conjugated Polymers ◽  
Temperature Dependence ◽  
Temperature Dependence Of Conductivity

Second Activation Energy in the Fractional Quantum Hall Effect

1987 ◽  
Vol 56 (9) ◽  
pp. 3005-3008 ◽  
Author(s):  
Junichi Wakabayashi ◽  
Satoru Sudou ◽  
Shinji Kawaji ◽  
Kazuhiko Hirakawa ◽  
Hiroyuki Sakaki
Keyword(s):  
Activation Energy ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Fractional Quantum Hall Effect ◽  
Fractional Quantum ◽  
Fractional Quantum Hall

Temperature dependence of conductivity of some partly-oxidised platinum complexes

1972 ◽  
pp. 2050 ◽  
Author(s):  
T. W. Thomas ◽  
Che-hsiung Hsu ◽  
M. M. Labes ◽  
P. S. Gomm ◽  
A. E. Underhill ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Platinum Complexes ◽  
Temperature Dependence Of Conductivity

P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation

2014 ◽  
Vol 1693 ◽  
Author(s):  
R. Nipoti ◽  
M. Puzzanghera ◽  
F. Moscatelli
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Ideality Factor ◽  
Low Voltage ◽  
Reverse Current ◽  
Forward Current ◽  
Current Region ◽  
Recombination Centers ◽  
Energy Dependent ◽  
Post Implantation

ABSTRACTTwo n+-i-p 6H-SiC diode families with P+ ion implanted emitter have been processed with all identical steps except the post implantation annealing: 1300°C/20min without C-cap has been compared with 1950°C/10min with C-cap. The analysis of the temperature dependence of the reverse current at low voltage (-100V) in the temperature range 27-290°C shows the dominance of a periphery current which is due to generation centers with number and activation energy dependent on the post implantation annealing process. The analysis of the temperature dependence of the forward current shows two ideality factor n region, one with n = 1.9/2 at low voltage and the other one with 1 < n < 2 without passing through 1 for increasing voltages. For both the diode families the current with n = 1.9/2 is a periphery current due to recombination centers with a thermal activation energy near the 6H-SiC mid gap. In the forward current region of 1 < n < 2, the two diode families show different ideality factor values which could be attributed to a different post implantation annealing defect activation.

Diffusion of Ce-Al Melts Measured by Sliding Cell Technique

2017 ◽  
Vol 898 ◽  
pp. 679-683
Author(s):  
Cheng Chen ◽  
Jin Liang Hu ◽  
Lang Xiang Zhong ◽  
Bo Zhang
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Strong Interaction ◽  
Al Alloy ◽  
Diffusion Behavior ◽  
Diffusion Constants

The diffusion behavior of Ce-Al alloy melt at three temperatures of 943K, 953K and 963K was investigated by sliding shear method. The inter-diffusion constants D show Arrhenius-type temperature dependence in the investigated regimes. Compared with the previous results achieved in Ce-Cu melt, liquid Ce-Al displays a much slower diffusion behavior and rather higher activation energy ED, which was caused by the strong interaction between Ce and Al.

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