Highly stable amorphous indium–gallium–zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure
2011 ◽
Vol 12
(1)
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pp. 47-50
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Keyword(s):
Via Hole
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Keyword(s):
2020 ◽
Vol 41
(6)
◽
pp. 856-859
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Keyword(s):
2020 ◽
Vol 30
(34)
◽
pp. 2003285
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2016 ◽
Vol 213
(7)
◽
pp. 1873-1877
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2017 ◽
Vol 48
(1)
◽
pp. 1231-1233
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Keyword(s):
2014 ◽