Laser deposition of semiconductor thin films based on iron oxides

AbstractIn this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.

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Pulsed laser deposition of wide-bandgap semiconductor thin films

10.1117/12.463774 ◽

2003 ◽

Cited By ~ 1

Author(s):

Donagh O'Mahony ◽

Eduardo de Posada ◽

James G. Lunney ◽

Jean-Paul Mosnier ◽

Enda McGlynn

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Wide Bandgap ◽

Laser Deposition ◽

Wide Bandgap Semiconductor ◽

Semiconductor Thin Films

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Pulsed laser deposition of II–VI semiconductor thin films and their layered structures

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2003.05.010 ◽

2004 ◽

Vol 371 (1-2) ◽

pp. 164-167 ◽

Cited By ~ 4

Author(s):

M. Oszwaldowski ◽

T. Berus ◽

J. Rzeszutek ◽

P. Sidorchuk ◽

J. Polit ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Layered Structures ◽

Laser Deposition ◽

Semiconductor Thin Films

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Optical characterization of binary, tertiary, and quaternary II-VI semiconductor thin films prepared by pulsed excimer laser deposition

10.1117/12.270084 ◽

1997 ◽

Author(s):

Lowell R. Matthews ◽

Robert L. Parkhill ◽

Edward T. Knobbe

Keyword(s):

Thin Films ◽

Excimer Laser ◽

Optical Characterization ◽

Laser Deposition ◽

Semiconductor Thin Films

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Structure and Properties Of III-N Semiconductor Thin Films Grown at Low Temperatures by N-Radical-Assisted Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-482-337 ◽

1997 ◽

Vol 482 ◽

Cited By ~ 1

Author(s):

F. E. Fernandez ◽

M. Pumarol ◽

A. Martinez ◽

V. Pantojas ◽

M. Garcia

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Film Growth ◽

Pulsed Laser ◽

Laser Deposition ◽

Nitride Semiconductors ◽

Semiconductor Thin Films ◽

Substrate Temperatures ◽

Growth Methods ◽

Gan Film

AbstractThin films of nitride semiconductors are usually grown by means requiring high substrate temperatures. Deposition techniques providing higher kinetic energies of incident species offer an alternative route which might allow growth of good quality films at lower temperatures. Pulsed Laser Deposition can provide higher kinetic energies than most thin film growth methods. However, III-nitride thin films grown by PLD are often nitrogen deficient. We have been able to obtain good stoichiometry for aluminum nitride films even at room temperature by providing atomic nitrogen at low (thermal) energies during growth. Very good orientation can be obtained on (001) sapphire substrates at moderate temperatures (∼ 500 C). AIN films were grown from either AIN or Al targets. We also report on preliminary work by the same method with GaN film growth from a liquid Ga target.

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