AbstractNovel organic, polymeric materials and processes of depositing thin films on electronics substrates by chemical vapor deposition (CVD) have been developed and the lithographic behavior of photoresist coated over these CVD films at deep ultraviolet (DUV) wavelength has been evaluated. The specific monomers synthesized for DUV applications include [2.2](1,4)- naphthalenophane, [2.2](9,10)-anthracenophane and their derivatives which showed remarkable film uniformity on flat wafers and conformality over structured topography wafers, upon polymerization by CVD. The chemical, physical and optical properties of the deposited films have been characterized by measuring parameters such as thickness uniformity, solubility, conformality, adhesion to semiconductor substrates, ultraviolet-visible spectra, optical density, optical constants, defectivity, and resist compatibility. Scanning electron microscope (SEM) photos of cross-sectioned patterned wafers showed verticle profiles with no footing, standing waves or undercut. Resist profiles down to 0.10 νm dense lines and 0.09 νm isolated lines were achieved in initial tests. CVD coatings generated 96-100% conformal films, which is a substantial improvement over commercial spin-on polymeric systems. The light absorbing layers have high optical density at 248 nm and are therefore capable materials for DUV lithography applications. CVD is a potentially useful technology to extend lithography for sub-0.15 νm devices. These films have potential applications in microelectronics, optoelectronics and photonics.
Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties