Low temperature growth of vanadium pentoxide nanomaterials by chemical vapour deposition using VO(acac)2as precursor

2010 ◽  
Vol 43 (18) ◽  
pp. 185102 ◽  
Author(s):  
Y Wang ◽  
Q Su ◽  
C H Chen ◽  
M L Yu ◽  
G J Han ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Vapour Deposition ◽  
Vanadium Pentoxide ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Temperature Growth ◽  
Low Temperature Growth

Low-temperature growth of graphene nanoplatelets by hot-wire chemical vapour deposition

2021 ◽  
Vol 411 ◽  
pp. 126995
Author(s):  
Nur Afira binti Anuar ◽  
Nurul Hidayah Mohamad Nor ◽  
Rozidawati binti Awang ◽  
Hideki Nakajima ◽  
Sarayut Tunmee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Graphene Nanoplatelets ◽  
Hot Wire ◽  
Temperature Growth ◽  
Low Temperature Growth

Comparison of low temperature growth of Si thin films on amorphous substrates by MBE and PECVD methods

2000 ◽  
Vol 609 ◽  
Author(s):  
J. A. Anna Selvan ◽  
D. Grützmacher ◽  
E. Müller ◽  
M. Rebien ◽  
M. Kummer ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Average Width ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Glass Substrates ◽  
Amorphous Substrates ◽  
Amorphous Glass ◽  
Si Films

ABSTRACTLow temperature growth of thin crystalline Si films on amorphous glass substrates by Molecular Beam Epitaxy (MBE) as well as by two different plasma enhanced chemical vapour deposition (PECVD) systems both using a DC plasma was carried out and the mictrostructural properties were analysed. In particular, the control over the texture along [220] orientation and the resulting columnar nature of the films were studied. The TEM cross section of Si films grown by MBE shows grains with an average width of 750 nm and a length of 3 microns. Using the low energy PECVD (LEPECVD) technique microcrystalline Si films were obtained with a growth rate of up to 35Å/sec. For high quality Si films with larger grains one may grow Si films by MBE whereas for Si films with passivated grain boundaries and for increased deposition rate, it is preferred to grow Si films by the newly developed methods of DC-PECVD.

Sign in / Sign up

Export Citation Format

Share Document