Reversibility in electric field-induced transitions and energy storage properties of bismuth-based perovskite ceramics

The 0.85BaTiO3–0.15Bi(Mg[Formula: see text]Nb[Formula: see text])O3 (BTBMN) ceramics with low-melting-temperature B2O3–Na2B4O7–Na2SiO3 (BNN) glass addition were prepared by the solid state method. The composition of the glass–ceramics was BTBMN–[Formula: see text] wt.% BNN ([Formula: see text], 1, 3, 5, 7, 9, 12, 15; abbreviated as BG). The sintering characteristics, phase structure, microstructure, dielectric properties and energy storage properties were systematically investigated. The sintering temperature of BTBMN ceramics was greatly reduced by the addition of BNN glass. The second-phase BaTi(BO[Formula: see text] was observed in the BG system until the glass content reached 15[Formula: see text]wt.%. The addition of BNN glass significantly reduces the grain size of BTBMN ceramics. With the increase of BNN glass content, dielectric constant of BG glass–ceramics at 1[Formula: see text]kHz gradually decreased, the maximum dielectric constant ([Formula: see text] of BG glass–ceramics gradually decreased, while the temperature corresponding to the maximum dielectric constant ([Formula: see text] increased, the ferroelectric relaxation behavior decreased and the temperature stability of the dielectric constant gradually improved. As the BNN glass content increased, the breakdown electric field strength (BDS) of BG glass–ceramics increased first and then decreased, and the polarization values reduced gradually, while the trend of energy storage performance is similar to BDS. When the BNN glass content was 3[Formula: see text]wt.%, the energy storage properties of the BG glass–ceramics were optimal, and a recoverable energy storage density ([Formula: see text]) of 1.26[Formula: see text]J/cm3 and an energy storage efficiency ([Formula: see text]) of 80.9% were obtained at the electric field strength of 220[Formula: see text]kV/cm. The results showed that BG glass–ceramics were promising for energy storage capacitors.

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Investigation of the Effects of Reduced Sintering Temperature on Dielectric, Ferroelectric and Energy Storage Properties of Microwave-Sintered PLZT 8/60/40 Ceramics

Energies ◽

10.3390/en13236457 ◽

2020 ◽

Vol 13 (23) ◽

pp. 6457

Author(s):

Ajeet Kumar ◽

Sivanagi Reddy Emani ◽

K. C. James Raju ◽

Jungho Ryu ◽

A. R. James

Keyword(s):

Energy Storage ◽

Electric Field ◽

Domain Switching ◽

Sintering Temperature ◽

Perovskite Phase ◽

Microwave Sintering ◽

High Energy ◽

Switching Current ◽

Energy Storage Properties ◽

Storage Properties

In this study, (Pb0.92La0.08) (Zr0.60Ti0.40) O3 (PLZT 8/60/40) ceramics were synthesized using a high-energy ball-milling technique followed by microwave sintering at different temperatures from 900 °C to 1200 °C. The optimal microwave sintering temperature for the PLZT 8/60/40 ceramics was found to be 1150 °C, which is relatively low compared with conventional sintering temperature. The sintered ceramics show the pure perovskite phase, uniform grain microstructure (1.2 µm) and high density (~99.5%). The polarization vs. electric field (P-E) hysteresis curves were used to investigate the ferroelectric and energy storage properties. The switching characteristic in P-E loops and occurrence of domain switching current in current vs. electric field (I-E) loops confirms their ferroelectric nature. The PLZT ceramics, which were sintered at 1150 °C, show the highest remnant polarization (Pr) of ~32.18 μC/cm2 and domain switching current (Imax) of ~0.91 mA with a low coercive field (Ec) of ~10.17 kV/cm. The bipolar and unipolar strain vs. electric field (S-E) hysteresis loops were also measured and the highest unipolar strain was found to be ~0.26% for the PLZT ceramics sintered at 1150 °C. The unipolar S-E curves were used to derive the piezoelectric coefficient (d33~495 pm/V) and a strain hysteresis loss (~5.8%).

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