A simple circuit to aid direct measurement of capture cross sections of deep level impurities

1984 ◽  
Vol 17 (11) ◽  
pp. 949-951 ◽  
Author(s):  
M M Chandra ◽  
V Kumar
Keyword(s):  
Direct Measurement ◽  
Cross Sections ◽  
Deep Level ◽  
Capture Cross ◽  
Simple Circuit ◽  
Capture Cross Sections

Meyer-Neldel Rule in Deep-Level-Transient-Spectroscopy and its Ramifications

2003 ◽  
Vol 763 ◽  
Author(s):  
Richard S. Crandall
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capture Cross ◽  
Emission Data ◽  
The Cross ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractThis paper presents data showing a Meyer-Neldel rule (MNR) in InGaAsN alloys. It is shown that without this knowledge, significant errors will be made using Deep-Level Transient-Spectroscopy (DLTS) emission data to determine capture cross sections. By correctly accounting for the MNR in analyzing the DLTS data the correct value of the cross section is obtained.

Determination of Traps in Poly(p-phenylene vinylene) Light Emitting Diodes by Chargebased Deep Level Transient Spectroscopy

2002 ◽  
Vol 725 ◽  
Author(s):  
Olivier Gaudin ◽  
Richard B. Jackman ◽  
Thien-Phap Nguyen ◽  
Philippe Le Rendu
Keyword(s):  
Cross Sections ◽  
Minority Carrier ◽  
Deep Level ◽  
Activation Energies ◽  
Phenylene Vinylene ◽  
Capture Cross ◽  
Light Emitting ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractCharge-based deep level transient spectroscopy (Q-DLTS) has been used to study the defect states that exist within poly(p-phenylene vinylene) (PPV), a semiconducting polymer with a band gap of about 2.4 eV. The technique allows the determination of activation energies, capture cross-sections and trap concentrations. In some circumstances, it is also possible to distinguish between minority and majority carrier traps. The structures investigated here consisted of ITO/PPV/MgAg light emitting diode (LED) devices. Two types of trapping centres were found. The first type has activation energies in the range 0.49 – 0.53 eV and capture cross-sections of the order of 10-16 – 10-18 cm2. It shows a Poole-Frenkel, field assisted-emission process. This level has been identified as a bulk acceptor-like majority carrier (i.e., hole) trap. The second type has activation energies in the range 0.40 – 0.42 eV and capture cross-sections of the order of 10-19 cm2. This level has been identified as a minority carrier (i.e., electron) trap. This second trap type is therefore expected to limit minority carrier injection into the PPV layer within the LED, and hence reduce electroluminescence under forward bias conditions.

DEEP LEVEL DEFECTS IN SILICON CARBIDE

2006 ◽  
Vol 16 (03) ◽  
pp. 779-823 ◽  
Author(s):  
A. A. LEBEDEV
Keyword(s):  
Cross Sections ◽  
Strong Influence ◽  
Deep Level ◽  
Published Data ◽  
Nonradiative Recombination ◽  
Capture Cross ◽  
Intrinsic Defects ◽  
Deep Centers ◽  
Different Types ◽  
Capture Cross Sections

Results obtained in recent studies of deep centers in 6H-, 4H-, and 3C-SiC are analyzed. The ionization energies and capture cross sections of centers formed by doping of SiC with different types of impurities or by irradiation, as well as the corresponding parameters of intrinsic defects, are presented. The involvement of these centers in radiative and nonradiative recombination is examined. Analysis of published data shows that a strong influence is exerted by intrinsic defects in the SiC crystal lattice both on the formation of deep centers and on the properties of the epitaxial layers themselves, such as their doping level and polytype homogeneity.

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