Native defects and impurities in Zn3N2: first-principle studies using gradient-correction approximation

2007 ◽  
Vol T129 ◽  
pp. 340-344 ◽  
Author(s):  
R Long ◽  
Y Dai ◽  
M Guo ◽  
Z K Zhang ◽  
K S Yang
Keyword(s):  
First Principle ◽  
Native Defects ◽  
Defects And Impurities ◽  
Gradient Correction

First-principle study of native defects in CuScO 2 and CuYO 2

2008 ◽  
Vol 17 (11) ◽  
pp. 4279-4284 ◽  
Author(s):  
Fang Zhi-Jie ◽  
Shi Li-Jie ◽  
Liu Yong-Hui
Keyword(s):  
First Principle ◽  
Native Defects

scholarly journals Fast Diffusion of Native Defects and Impurities in Perovskite Solar Cell Material CH3NH3PbI3

2016 ◽  
Vol 28 (12) ◽  
pp. 4349-4357 ◽  
Author(s):  
Dongwen Yang ◽  
Wenmei Ming ◽  
Hongliang Shi ◽  
Lijun Zhang ◽  
Mao-Hua Du
Keyword(s):  
Solar Cell ◽  
Perovskite Solar Cell ◽  
Fast Diffusion ◽  
Native Defects ◽  
Cell Material ◽  
Defects And Impurities ◽  
Solar Cell Material

scholarly journals Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

2016 ◽  
Vol 34 (4) ◽  
pp. 726-734 ◽  
Author(s):  
Łukasz Gelczuk ◽  
Maria Dąbrowska-Szata ◽  
Beata Ściana ◽  
Damian Pucicki ◽  
Damian Radziewicz ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Parameters ◽  
Native Defects ◽  
Three Samples ◽  
Nitrogen Concentrations ◽  
Defects And Impurities ◽  
Transient Spectroscopy

AbstractConventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

Investigation of native defects and impurities in X-N (X = Al, Ga, In)

2020 ◽  
pp. 110169
Author(s):  
Yingjie Chen ◽  
Liyuan Wu ◽  
Dan Liang ◽  
Pengfei Lu ◽  
Jianjun Wang ◽  
...  
Keyword(s):  
Native Defects ◽  
Defects And Impurities
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