Optical emission spectroscopy of plasma generated by a waveguide-supplied microwave plasma source operated at 915 MHz

2014 ◽  
Vol T161 ◽  
pp. 014055
Author(s):  
Robert Miotk ◽  
Mariusz Jasinski ◽  
Jerzy Mizeraczyk
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Optical Emission ◽  
Plasma Source

scholarly journals Characterization of an Atmospheric-Pressure Argon Plasma Generated by 915 MHz Microwaves Using Optical Emission Spectroscopy

2017 ◽  
Vol 2017 ◽  
pp. 1-6
Author(s):  
Robert Miotk ◽  
Bartosz Hrycak ◽  
Mariusz Jasiński ◽  
Jerzy Mizeraczyk
Keyword(s):  
Atmospheric Pressure ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Argon Plasma ◽  
Optical Emission ◽  
Coaxial Line ◽  
Plasma Source ◽  
Stark Broadening ◽  
Concentration Of Electrons

The paper presents the investigations of an atmospheric-pressure argon plasma generated at 915 MHz microwaves using the optical emission spectroscopy (OES). The 915 MHz microwave plasma was inducted and sustained in a waveguide-supplied coaxial-line-based nozzleless microwave plasma source. The aim of presented investigations was to estimate parameters of the generated plasma, that is, excitation temperature of electrons Texc, temperature of plasma gas Tg, and concentration of electrons ne. Assuming that excited levels of argon atoms are in local thermodynamic equilibrium, Boltzmann method allowed in determining the Texc temperature in the range of 8100–11000 K. The temperature of plasma gas Tg was estimated by comparing the simulated spectra of the OH radical to the measured one in LIFBASE program. The obtained Tg temperature ranged in 1200–2800 K. Using a method based on Stark broadening of the Hβ line, the concentration of electrons ne was determined in the range from 1.4 × 1015 to 1.7 × 1015 cm−3, depending on the power absorbed by the microwave plasma.

Investigation of Microwave Plasma during Diamond Doping by Phosphorus Using Optical Emission Spectroscopy

2019 ◽  
Vol 216 (21) ◽  
pp. 1900234
Author(s):  
Mikhail Aleksandrovich Lobaev ◽  
Dmitry Borisovich Radishev ◽  
Alexey Mikhailovich Gorbachev ◽  
Anatoly Leontievich Vikharev ◽  
Mikhail Nikolaevich Drozdov
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Optical Emission

Optical Emission Spectroscopy-Based Tomography for Compact Low-Pressure Microwave Plasma in a Multicusp

2017 ◽  
Vol 45 (9) ◽  
pp. 2492-2503 ◽  
Author(s):  
Kavita Rathore ◽  
Sudeep Bhattacharjee ◽  
Dudh Nath Patel ◽  
Prabhat Munshi
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Optical Emission ◽  
Low Pressure

Optical emission spectroscopy during the bias-enhanced nucleation of diamond microcrystals by microwave plasma chemical vapor deposition process

1996 ◽  
Vol 11 (11) ◽  
pp. 2852-2860 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Microwave plasma chemical vapor deposition (MWPCVD) process has been used to grow diamond thin films on silicon substrates from CH4–H2 gas mixture. Bias-enhanced nucleation (BEN) pretreatment has been used to increase the density of diamond nuclei. Various species in the CH4–H2 plasma have been identified using optical emission spectroscopy (OES), and their effect on the film microstructure has been studied. During the pretreatment process the emission intensities of CH, CH+, C2, H, and H2* species have been found to increase significantly for a negative dc bias voltage |VB| > 60 V. The higher concentration of excited species and the associated effects play a significant role in the growth process. A very thin layer of a-C containing predominant sp3 bonded carbon species in the initial stages of the growth is found to be present in these films. The microstructure of the films has been found to be very sensitive to the biasing conditions.

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