Dislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different Atmospheres

2013 ◽  
Vol 205-206 ◽  
pp. 238-242 ◽  
Author(s):  
Ling Mao Xu ◽  
Chao Gao ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Dislocation Motion ◽  
Nitrogen Atmosphere ◽  
Dislocation Glide ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Pinning Effect ◽  
Oxygen Precipitates ◽  
Critical Resolved Shear Stress

Effects of prior rapid thermal processing (RTP) under different atmospheres on the motion of dislocations initiated from indentations in Czochralski (CZ) silicon have been investigated. It is found that the maximum gliding distances of dislocations in the specimens with the prior RTP under nitrogen (N2) atmosphere are much smaller than those in the specimens with the prior RTP under argon (Ar) atmosphere. This is also the case when the specimens received annealing for oxygen precipitation (OP) subsequent to the RTP at 1250 °C under N2 and Ar atmospheres, respectively. It is believed that the nitrogen atoms introduced during the RTP under nitrogen atmosphere or the oxygen precipitates facilitated by the RTP-introduced nitrogen atoms can exhibit pinning effect on the dislocation motion, which increases the critical resolved shear stress for dislocation glide.

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

scholarly journals Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon

2013 ◽  
Vol 113 (16) ◽  
pp. 163510 ◽  
Author(s):  
Xinpeng Zhang ◽  
Chao Gao ◽  
Maosen Fu ◽  
Xiangyang Ma ◽  
Jan Vanhellemont ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers

2008 ◽  
Vol 573-574 ◽  
pp. 45-60 ◽  
Author(s):  
Robert J. Falster ◽  
Vladimir V. Voronkov
Keyword(s):  
Thermal Processing ◽  
Critical Role ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Intrinsic Point Defect ◽  
Defect Engineering ◽  
Materials Engineering ◽  
Oxygen Precipitation ◽  
Precipitation Behaviour ◽  
Oxygen Precipitates

The use of Rapid Thermal Processing to install lattice vacancy profiles into silicon wafers for the purpose of forming a template for the nucleation and ideal control of oxygen precipitation has become an important materials engineering tool for the microelectronics industry. This paper reviews the principles of the technique and the precise materials/defect engineering that it engenders. It furthermore discusses what has been learned regarding the elusive properties of the intrinsic point defects in silicon through studies of the distributions of vacancies created by use of the technique. Also discussed are recent discoveries about the critical role of the other intrinsic point defect, the self-interstitial and the development of oxygen precipitates and their distributions post-nucleation and the critical importance of what has become to be called the “ninja transformation” in the switching-on of gettering efficiency of oxygen precipitate systems.

Oxygen Precipitation within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers

2005 ◽  
Vol 22 (9) ◽  
pp. 2407-2410 ◽  
Author(s):  
Cui Can ◽  
Yang De-Ren ◽  
Ma Xiang-Yang ◽  
Fu Li-Ming ◽  
Fan Rui-Xin ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

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