Frequency-Dependent Electrical Transport Properties of 4, 4′, 4″-Tri( N -carbazolyl)-Triphenylamine Investigated by Impedance Spectroscopy

2011 ◽  
Vol 28 (5) ◽  
pp. 057201 ◽  
Author(s):  
Bi-Xin Li ◽  
Jiang-Shan Chen ◽  
Yong-Biao Zhao ◽  
Dong-Ge Ma
2010 ◽  
Vol 160 (13-14) ◽  
pp. 1422-1426 ◽  
Author(s):  
Gayatri Chauhan ◽  
Ritu Srivastava ◽  
Priyanka Tyagi ◽  
Amit Kumar ◽  
P.C. Srivastava ◽  
...  

AIP Advances ◽  
2016 ◽  
Vol 6 (5) ◽  
pp. 055909 ◽  
Author(s):  
Chien-Yie Tsay ◽  
Yi-Hsiang Lin ◽  
Yao-Ming Wang ◽  
Horng-Yi Chang ◽  
Chien-Ming Lei ◽  
...  

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Camilo A. Otalora ◽  
Andres F. Loaiza ◽  
Gerardo Gordillo

Impedance spectroscopy (IS) is used for studying the electrical transport properties of thin films used in organic solar cells with structure ITO/HTL/active layer/cathode, where PEDOT:PSS (poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid) and CuPC (tetrasulfonated copper-phthalocyanine) were investigated as HTL (hole transport layer) and P3HT:PCBM (poly-3-hexylthiophene:phenyl-C61-butyric acid methyl ester) blends prepared from mesitylene and chlorobenzene based solutions were studied as active layer and Ag and Al were used as cathode. The study allowed determining the influence of the type of solvent used for the preparation of the active layer as well as the speed at which the solvents are removed on the carriers mobility. The effect of exposing the layer of P3HT to the air on its mobility was also studied. It was established that samples of P3HT and P3HT:PCBM prepared using mesitylene as a solvent have mobility values significantly higher than those prepared from chlorobenzene which is the solvent most frequently used. It was also determined that the mobility of carriers in P3HT films strongly decreases when this sample is exposed to air. In addition, it was found that the electrical properties of P3HT:PCBM thin films can be improved by removing the solvent slowly which is achieved by increasing the pressure inside the system of spin-coating during the film growth.


2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


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