Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics

2011 ◽  
Vol 110 (10) ◽  
pp. 103703 ◽  
Author(s):  
Linfeng Lan ◽  
Miao Xu ◽  
Junbiao Peng ◽  
Hua Xu ◽  
Min Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Anodic Aluminum Oxide ◽  
Gate Dielectrics ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Anodic Aluminum ◽  
Indium Zinc Oxide

Role of Rare Earth Ions in Anodic Gate Dielectrics for Indium-Zinc-Oxide Thin-Film Transistors

2012 ◽  
Vol 159 (5) ◽  
pp. H502-H506 ◽  
Author(s):  
Dongxiang Luo ◽  
Linfeng Lan ◽  
Miao Xu ◽  
Hua Xu ◽  
Min Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Rare Earth ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Rare Earth Ions ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide
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