GaAs-based III–Ny–V1−yactive regions based on short-period super-lattice structures

2008 ◽  
Vol 23 (12) ◽  
pp. 125016 ◽  
Author(s):  
Yousef Seyed Jalili ◽  
Paul N Stavrinou ◽  
Gareth Parry
Author(s):  
Kazumichi Ogura ◽  
Michael M. Kersker

Backscattered electron (BE) images of GaAs/AlGaAs super lattice structures were observed with an ultra high resolution (UHR) SEM JSM-890 with an ultra high sensitivity BE detector. Three different types of super lattice structures of GaAs/AlGaAs were examined. Each GaAs/AlGaAs wafer was cleaved by a razor after it was heated for approximately 1 minute and its crosssectional plane was observed.First, a multi-layer structure of GaAs (100nm)/AlGaAs (lOOnm) where A1 content was successively changed from 0.4 to 0.03 was observed. Figures 1 (a) and (b) are BE images taken at an accelerating voltage of 15kV with an electron beam current of 20pA. Figure 1 (c) is a sketch of this multi-layer structure corresponding to the BE images. The various layers are clearly observed. The differences in A1 content between A1 0.35 Ga 0.65 As, A1 0.4 Ga 0.6 As, and A1 0.31 Ga 0.69 As were clearly observed in the contrast of the BE image.


2013 ◽  
Vol 43 (8) ◽  
pp. 930-935
Author(s):  
Yu WEN ◽  
XinYuan GAN ◽  
NaiMing WANG ◽  
Hui YANG ◽  
XinHe ZHENG ◽  
...  

2009 ◽  
Vol 45 (3) ◽  
pp. 165 ◽  
Author(s):  
A. Gassenq ◽  
G. Boissier ◽  
P. Grech ◽  
G. Narcy ◽  
A.N. Baranov ◽  
...  

2005 ◽  
Vol 278 (1-4) ◽  
pp. 378-382 ◽  
Author(s):  
X.Q. Shen ◽  
M. Shimizu ◽  
T. Yamamoto ◽  
Y. Honda ◽  
H. Okumura

1994 ◽  
Author(s):  
B. Singh ◽  
K.N. Tripathi ◽  
Y. Singh ◽  
H.K. Sharma ◽  
R. Swarup

2005 ◽  
Vol 2 (7) ◽  
pp. 2385-2388 ◽  
Author(s):  
X.Q. Shen ◽  
T. Yamamoto ◽  
S. Nakashima ◽  
H. Matsuhata ◽  
H. Okumura

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