GaN-based p-type metal-oxide–semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method

Oxide Semiconductor ◽

Oxidation Method ◽

Photoelectrochemical Oxidation ◽

P Type

GaAs metal-oxide-semiconductor devices with a complex gate oxide composed of SiO2and GaAs oxide grown using a photoelectrochemical oxidation method

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/1/015005 ◽

2009 ◽

Vol 25 (1) ◽

pp. 015005 ◽

Cited By ~ 2

Author(s):

Hsin-Ying Lee ◽

Yuan-Fu Lin

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Oxidation Method ◽

Photoelectrochemical Oxidation

Negative bias temperature instability in SOI‐like p‐type metal oxide semiconductor devices

Micro & Nano Letters ◽

10.1049/mnl.2018.0012 ◽

2018 ◽

Vol 13 (8) ◽

pp. 1151-1154

Author(s):

Lijie Li ◽

Chan Shan ◽

Ying Wang ◽

Xin Luo

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

Scaling size distribution of oxide defects, trema‐fractal oxide layer, and breakdown statistics of metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.101414 ◽

1989 ◽

Vol 54 (9) ◽

pp. 834-836 ◽

Cited By ~ 1

Author(s):

R. D. S. Yadava

Keyword(s):

Metal Oxide ◽

Size Distribution ◽

Oxide Layer ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Oxide Defects

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

10.1143/jjap.50.090201 ◽

2011 ◽

Vol 50 (9) ◽

pp. 090201

Author(s):

Masato Noborio ◽

Michael Grieb ◽

Anton J. Bauer ◽

Dethard Peters ◽

Peter Friedrichs ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Gate Oxides ◽

P Type

Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

10.1143/jjap.48.04c087 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C087 ◽

Cited By ~ 6

Author(s):

Mitsuo Okamoto ◽

Tsutomu Yatsuo ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Gate Oxide ◽

Oxide Semiconductor

A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal–Oxide–Semiconductor Devices

ACS Applied Materials & Interfaces ◽

10.1021/acsami.5b10661 ◽

2016 ◽

Vol 8 (8) ◽

pp. 5416-5423 ◽

Cited By ~ 6

Author(s):

Chengqing Hu ◽

Martin D. McDaniel ◽

Aiting Jiang ◽

Agham Posadas ◽

Alexander A. Demkov ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Low Leakage

Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4864416 ◽

2014 ◽

Vol 115 (7) ◽

pp. 074502 ◽

Cited By ~ 1

Author(s):

Piyas Samanta ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices

10.1143/jjap.39.2167 ◽

2000 ◽

Vol 39 (Part 1, No. 4B) ◽

pp. 2167-2171 ◽

Cited By ~ 1

Author(s):

Ihl Hyun Cho ◽

Nag Kyunn Sung ◽

Jong Hyuk Oh ◽

Min Soo Park ◽

Dong Kyun Sohn ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Dual Gate

Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices

10.1143/jjap.41.552 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 552-556 ◽

Cited By ~ 3

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Quantum Mechanical Calculation ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Direct Tunneling Current

Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N2O

10.1143/jjap.35.l968 ◽

1996 ◽

Vol 35 (Part 2, No. 8A) ◽

pp. L968-L970 ◽

Cited By ~ 4

Author(s):

Kuei-Shu Chang-Liao ◽

Tang-Yuan Lan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Hot Electron ◽

Gate Electrode ◽

Amorphous Si