Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2167-2171 ◽  
Author(s):  
Ihl Hyun Cho ◽  
Nag Kyunn Sung ◽  
Jong Hyuk Oh ◽  
Min Soo Park ◽  
Dong Kyun Sohn ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Complementary Metal Oxide Semiconductor ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Gate

Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 5926-5931
Author(s):  
Masahiro Shimizu ◽  
Takashi Kuroi ◽  
Masahide Inuishi ◽  
Hideaki Arima ◽  
Haruhiko Abe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Gate ◽  
Effect Transistor
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