High temperature laser diode based on a single sheet of quantum dots

2015 ◽  
Vol 30 (10) ◽  
pp. 105005 ◽  
Author(s):  
N N Ledentsov ◽  
V A Shchukin ◽  
M V Maximov ◽  
Yu M Shernyakov ◽  
A S Payusov ◽  
...  
2019 ◽  
Author(s):  
Aurelio A. Rossinelli ◽  
Henar Rojo ◽  
Aniket S. Mule ◽  
Marianne Aellen ◽  
Ario Cocina ◽  
...  

<div>Colloidal semiconductor nanoplatelets exhibit exceptionally narrow photoluminescence spectra. This occurs because samples can be synthesized in which all nanoplatelets share the same atomic-scale thickness. As this dimension sets the emission wavelength, inhomogeneous linewidth broadening due to size variation, which is always present in samples of quasi-spherical nanocrystals (quantum dots), is essentially eliminated. Nanoplatelets thus offer improved, spectrally pure emitters for various applications. Unfortunately, due to their non-equilibrium shape, nanoplatelets also suffer from low photo-, chemical, and thermal stability, which limits their use. Moreover, their poor stability hampers the development of efficient synthesis protocols for adding high-quality protective inorganic shells, which are well known to improve the performance of quantum dots. <br></div><div>Herein, we report a general synthesis approach to highly emissive and stable core/shell nanoplatelets with various shell compositions, including CdSe/ZnS, CdSe/CdS/ZnS, CdSe/Cd<sub>x</sub>Zn<sub>1–x</sub>S, and CdSe/ZnSe. Motivated by previous work on quantum dots, we find that slow, high-temperature growth of shells containing a compositional gradient reduces strain-induced crystal defects and minimizes the emission linewidth while maintaining good surface passivation and nanocrystal uniformity. Indeed, our best core/shell nanoplatelets (CdSe/Cd<sub>x</sub>Zn<sub>1–x</sub>S) show photoluminescence quantum yields of 90% with linewidths as low as 56 meV (19.5 nm at 655 nm). To confirm the high quality of our different core/shell nanoplatelets for a specific application, we demonstrate their use as gain media in low-threshold ring lasers. More generally, the ability of our synthesis protocol to engineer high-quality shells can help further improve nanoplatelets for optoelectronic devices.</div>


Author(s):  
Mingxuan Zhang ◽  
Liyao Zhang ◽  
Zhongyue Zhang ◽  
Peng Yu ◽  
Shuang Yao
Keyword(s):  

2010 ◽  
Vol 96 (8) ◽  
pp. 083102 ◽  
Author(s):  
M. Riotte ◽  
E. Fohtung ◽  
D. Grigoriev ◽  
A. A. Minkevich ◽  
T. Slobodskyy ◽  
...  

2018 ◽  
Vol 256 (3) ◽  
pp. 1800395 ◽  
Author(s):  
Indranil Mal ◽  
Joseph Jayarubi ◽  
Subhasis Das ◽  
Akant Sagar Sharma ◽  
Amalorpavam John Peter ◽  
...  

Author(s):  
А.Е. Жуков ◽  
Н.В. Крыжановская ◽  
Э.И. Моисеев ◽  
А.С. Драгунова ◽  
А.М. Надточий ◽  
...  

The rate equations are used to analyze the characteristics of a tandem consisting of a laser diode and a semiconductor optical amplifier made of a single heterostructure with quantum dots. The optimal value of the current distribution coefficient the amplifier and the laser, as well as the optimal resonator length that provides the highest output power of the tandem were determined. It is shown that the use of the tandem allows, at the same total consumed current, to significantly (more than 4 times for 1 A) increase the power emitted through the ground-state optical transition in comparison with that achievable with a laser diode solely being limited by the onset of lasing through an excited-state optical transition.


2011 ◽  
Vol 54 (3) ◽  
pp. 215-219 ◽  
Author(s):  
Ajit V. Barve ◽  
John Montaya ◽  
Yagya Sharma ◽  
Thomas Rotter ◽  
Jiayi Shao ◽  
...  

2020 ◽  
Vol 29 (2) ◽  
pp. 026402 ◽  
Author(s):  
Shi-Hao Ruan ◽  
Chun-Miao Han ◽  
Fu-Lu Li ◽  
Bing Li ◽  
Bing-Bing Liu

2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Tingting Zhang ◽  
Xugu Zhang ◽  
Peizhi Yang ◽  
Jinke Bai ◽  
Chun Chang ◽  
...  

Stable luminance properties are essential for light-emitting devices with excellent performance. Thermal photoluminescence (PL) quenching of quantum dots (QDs) under a high temperature resulting from a surface hole or electron traps will lead to unstable and dim brightness. After treating CdZnSe/ZnSe QDs with TBP, which is a well-known passivation reagent of the anions, the excess Se sites on the surface of the QDs were removed and their PL quantum yields (QYs) was improved remarkable. Furthermore, after TBP treatment, the CdZnSe/ZnSe QDs exhibit no quenching phenomena even at a high temperature of 310°C. The electroluminescent light-mitting diodes based on the QDs with TBP treatment also demonstrated satisfied performance with a maximum current density of 1679.6 mA/cm2, a peak luminance of 89500 cd/m2, and the maximum values of EQE and luminescence efficiency are 15% and 14.9 cd/A, respectively. The performance of the fabricated devices can be further improved providing much more in-depth studies on the CdZnSe/ZnSe QDs.


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