Photoluminescence peak energy evolution for porous silicon during photo-oxidation and gamma -ray oxidation

1995 ◽  
Vol 7 (3) ◽  
pp. 697-704 ◽  
Author(s):  
L Z Zhang ◽  
B Q Zong ◽  
B R Zhang ◽  
Z H Xu ◽  
J Q Li ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gamma Ray ◽  
Energy Evolution ◽  
Photo Oxidation ◽  
Peak Energy ◽  
Photoluminescence Peak

Steplike behavior of photoluminescence peak energy and formation ofp‐type porous silicon

1993 ◽  
Vol 62 (6) ◽  
pp. 642-644 ◽  
Author(s):  
Shu‐Lin Zhang ◽  
Kuok‐san Ho ◽  
Yongtian Hou ◽  
Bidong Qian ◽  
Peng Diao ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Peak Energy ◽  
Photoluminescence Peak

Preparation and Characterization of ZnS/ZnO Compound Grown on Porous Silicon Substrate Using CVD Method

2010 ◽  
Vol 663-665 ◽  
pp. 393-396
Author(s):  
Fu Ru Zhong ◽  
Xiao Yi Lv ◽  
Zhen Hong Jia
Keyword(s):  
Electron Microscopy ◽  
Porous Silicon ◽  
Room Temperature ◽  
Zinc Sulphide ◽  
Cvd Method ◽  
Peak Energy ◽  
Porous Silicon Substrate ◽  
Photoluminescence Peak ◽  
Scanning Electron

We have investigated the morphology and photoluminescence (PL) of Zinc Oxide (ZnO) and Zinc sulphide (ZnS) compound grown on porous silicon at room temperature. Under different excitation wavelengths (320 nm, 340nm, 370 nm), the photoluminescence (PL) spectra of PS-ZnS-ZnO composites were different, and at 550nm there is a strong photoluminescence peak. Energy dispersive spectroscopy (EDS) has been carried out to evaluate the existing of ZnO/ZnS compound. In addition, the scanning electron microscopy (SEM) observation shows that the morphology of the PS-ZnS-ZnO composites was well grown on porous silicon.

scholarly journals BATSE observations of gamma-ray burst spectra. 2: Peak energy evolution in bright, long bursts

1995 ◽  
Vol 439 ◽  
pp. 307 ◽  
Author(s):  
L. A. Ford ◽  
D. L. Band ◽  
J. L. Matteson ◽  
M. S. Briggs ◽  
G. N. Pendleton ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Energy Evolution ◽  
Gamma Ray Burst ◽  
Peak Energy

Comparison of Porous Silicon Etched Gently and Under Illumination

1994 ◽  
Vol 358 ◽  
Author(s):  
Adam A. Filios ◽  
Raphael Tsu
Keyword(s):  
Porous Silicon ◽  
Thermal Annealing ◽  
Raman Line ◽  
Quantum Confinement ◽  
Blue Shift ◽  
The Other ◽  
Bulk Silicon ◽  
Dominant Mechanism ◽  
Peak Energy ◽  
Photoluminescence Peak

ABSTRACTPorous silicon samples prepared in the dark under "gentle" etching conditions clearly demonstrate effects of quantum confinement, such as a correlation of the photoluminescence peak energy with the downshift of the Raman line from 521 cm−1 for bulk silicon, and a blue shift in the remaining weak photoluminescence after thermal annealing. On the other hand, samples prepared under illumination as well as those heavily etched in the dark, though luminesce brightly, show no significant effects of quantum confinement, suggesting a different dominant mechanism for the observed luminescence.

Pholuminuksence Studies on Porous Silioon Quantum Confinement Mechanism

1993 ◽  
Vol 298 ◽  
Author(s):  
Shulin Zhang ◽  
Kuoksan He ◽  
Yangtian Hou ◽  
Xin Wang ◽  
Jingjian Li ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Quantum Wire ◽  
Quantum Confinement ◽  
Mechanism Model ◽  
Peak Energy ◽  
P Type ◽  
Silicon Based ◽  
First Time ◽  
Photoluminescence Peak

AbstractA novel step—like and pinning behavior of photoluminescence peak energy connected with changes in the concentration of HIF and current density were for the first time observed for p— type porous silicon. Based on a theoretical calculation of the electron structure of the silicon quantum wire it is argued that these behaviors can be explained in terms of a novel formation mechanism model of porous silicon.

scholarly journals CORRELATION BETWEEN PEAK ENERGY AND PEAK LUMINOSITY IN SHORT GAMMA-RAY BURSTS

2012 ◽  
Vol 755 (1) ◽  
pp. 55 ◽  
Author(s):  
Z. B. Zhang ◽  
D. Y. Chen ◽  
Y. F. Huang
Keyword(s):  
Gamma Ray ◽  
Gamma Ray Bursts ◽  
Peak Energy ◽  
Peak Luminosity

scholarly journals Excitonic States and Related Optical Susceptibility in InN/AlN Quantum Well Under the Effects of the Well Size and Impurity Position

2021 ◽  
Vol 4 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Fathallah Jabouti ◽  
Haddou El Ghazi ◽  
Redouane En-nadir ◽  
Izeddine Zorkani ◽  
Anouar Jorio
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Binding Energies ◽  
Exciton Transition ◽  
Impurity Position ◽  
Optical Susceptibility ◽  
Peak Energy ◽  
Eigen Values ◽  
Excitonic States ◽  
Photoluminescence Peak

Based on the finite difference method, linear optical susceptibility, photoluminescence peak and binding energies of three first states of an exciton trapped by a positive charge donor-impurity ( ) confined in InN/AlN quantum well are investigated in terms of well size and impurity position. The electron, heavy hole free and bound excitons allowed eigen-values and corresponding eigen-functions are obtained numerically by solving one-dimensional time-independent Schrödinger equation. Within the parabolic band and effective mass approximations, the calculations are made considering the coupling of the electron in the n-th conduction subband and the heavy hole in the m-th valence subband under the impacts of the well size and impurity position. The obtained results show clearly that the energy, binding energy and photoluminescence peak energy show a decreasing behavior according to well size for both free and bound cases. Moreover, the optical susceptibility associated to exciton transition is strongly red-shift (blue-shifted) with enhancing the well size (impurity position).

scholarly journals The properties of prompt emission in short gamma-ray bursts with extended emission observed by Fermi/GBM

2020 ◽  
Vol 492 (3) ◽  
pp. 3622-3630
Author(s):  
Lin Lan ◽  
Rui-Jingi Lu ◽  
Hou-Jun Lü ◽  
Jun Shen ◽  
Jared Rice ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Gamma Ray Bursts ◽  
Large Scatter ◽  
Intrinsic Properties ◽  
Temporal Properties ◽  
Peak Energy ◽  
Peak Flux ◽  
Short Grbs ◽  
Prompt Emission ◽  
Extended Emission

ABSTRACT Short gamma-ray bursts (GRB) with extended emission (EE) that are composed of an initial short hard spike followed by a long-lasting EE are thought to comprise a sucategory of short GRBs. The narrow energy band available during the Swift era, combined with a lack of spectral information, prevented the discovery of the intrinsic properties of these events. In this paper, we perform a systematic search of short GRBs with EE using all available Fermi/GBM data. The search identified 26 GBM-detected short GRBs with EE that are similar to GRB 060614 observed by Swift/BAT. We focus on investigating the spectral and temporal properties of both the hard spike and the EE component of all 26 GRBs, and explore differences and possible correlations between them. We find that while the peak energy (Ep) of the hard spikes is slightly harder than that of the EE, their fluences are comparable. The harder Ep seems to correspond to a larger fluence and peak flux, with a large scatter for both the hard spike and the EE component. Moreover, the Ep of both the hard spike and the EE are compared with other short GRBs. Finally, we also compare the properties of GRB 170817A with those of short GRBs with EE and find no significant statistical differences between them. We find that GRB 170817A has the lowest Ep, probably because it is off-axis.

Photo-oxidation effects in porous silicon luminescence

2004 ◽  
Vol 69 (20) ◽  
Author(s):  
R. R. Koropecki ◽  
R. D. Arce ◽  
J. A. Schmidt
Keyword(s):  
Porous Silicon ◽  
Photo Oxidation
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