Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation

2000 ◽  
Vol 11 (4) ◽  
pp. 309-313 ◽  
Author(s):  
M V Maximov ◽  
A F Tsatsul'nikov ◽  
D S Sizov ◽  
Yu M Shernyakov ◽  
A E Zhukov ◽  
...  
Keyword(s):  
Phase Separation ◽  
Quantum Dot ◽  
Carrier Distribution ◽  
Carrier Relaxation

Investigation of carrier relaxation dynamics in single CdSe/ZnSe self-organized quantum dot by time-resolved micro-photoluminescence

2001 ◽  
Vol 30 (5) ◽  
pp. 448-452 ◽  
Author(s):  
Takeshi Ota ◽  
Yasuhiro Murase ◽  
Kenzo Maehashi ◽  
Hisao Nakashima ◽  
Chikara Watatani ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Relaxation Dynamics ◽  
Time Resolved ◽  
Carrier Relaxation ◽  
Self Organized ◽  
Carrier Relaxation Dynamics

Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation

2012 ◽  
Vol 111 (8) ◽  
pp. 084309 ◽  
Author(s):  
M. Korytov ◽  
J. A. Budagosky ◽  
J. Brault ◽  
T. Huault ◽  
M. Benaissa ◽  
...  
Keyword(s):  
Phase Separation ◽  
Quantum Dot ◽  
Strain Evolution

Large-Area Ordered Quantum-Dot Monolayers via Phase Separation During Spin-Casting

2005 ◽  
Vol 15 (7) ◽  
pp. 1117-1124 ◽  
Author(s):  
S. Coe-Sullivan ◽  
J. S. Steckel ◽  
W.-K. Woo ◽  
M. G. Bawendi ◽  
V. Bulović
Keyword(s):  
Phase Separation ◽  
Quantum Dot ◽  
Large Area ◽  
Spin Casting

INTRADOT CARRIER RELAXATION IN RADIATION-DAMAGED InGaAs/GaAs QUANTUM DOT HETEROSTRUCTURES

2003 ◽  
Author(s):  
A. CAVACO ◽  
M. C. CARMO ◽  
N. A. SOBOLEV ◽  
F. GUFFARTH ◽  
H. BORN ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Carrier Relaxation ◽  
Gaas Quantum Dot

scholarly journals Spin and carrier relaxation dynamics in InAs/GaAs quantum-dot spin-LEDs

2007 ◽  
Vol 61 ◽  
pp. 745-749 ◽  
Author(s):  
W Löffler ◽  
N Höpcke ◽  
C Mauser ◽  
J Fallert ◽  
T Passow ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Relaxation Dynamics ◽  
Carrier Relaxation ◽  
Gaas Quantum Dot ◽  
Carrier Relaxation Dynamics

scholarly journals Optical information processing using dual state quantum dot lasers: complexity through simplicity

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Bryan Kelleher ◽  
Michael Dillane ◽  
Evgeny A. Viktorov
Keyword(s):  
Information Processing ◽  
Quantum Dot ◽  
Integrated Circuits ◽  
Semiconductor Lasers ◽  
Relaxation Oscillation ◽  
Optical Injection ◽  
Cavity Surface ◽  
Quantum Dot Lasers ◽  
Carrier Relaxation ◽  
Emitting Lasers

AbstractWe review results on the optical injection of dual state InAs quantum dot-based semiconductor lasers. The two states in question are the so-called ground state and first excited state of the laser. This ability to lase from two different energy states is unique amongst semiconductor lasers and in combination with the high, intrinsic relaxation oscillation damping of the material and the novel, inherent cascade like carrier relaxation process, endows optically injected dual state quantum dot lasers with many unique dynamical properties. Particular attention is paid to fast state switching, antiphase excitability, novel information processing techniques and optothermally induced neuronal phenomena. We compare and contrast some of the physical properties of the system with other optically injected two state devices such as vertical cavity surface emitting lasers and ring lasers. Finally, we offer an outlook on the use of quantum dot material in photonic integrated circuits.

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