Line edge roughness after development in a positive-tone chemically amplified resist of post-optical lithography investigated by Monte Carlo simulation and a dissolution model

Dissolution Model

Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography

10.1117/12.772174 ◽

2008 ◽

Cited By ~ 1

Author(s):

Akinori Saeki ◽

Takahiro Kozawa ◽

Seiichi Tagawa ◽

Heidi B. Cao ◽

Hai Deng ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Optical Lithography ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

On Line

Relationship between Resolution, Line Edge Roughness, and Sensitivity in Chemically Amplified Resist of Post-Optical Lithography Revealed by Monte Carlo and Dissolution Simulations

Applied Physics Express ◽

10.1143/apex.2.075006 ◽

2009 ◽

Vol 2 ◽

pp. 075006 ◽

Cited By ~ 5

Author(s):

Akinori Saeki ◽

Takahiro Kozawa ◽

Seiichi Tagawa

Keyword(s):

Monte Carlo ◽

Optical Lithography ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist

Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

10.7567/jjap.51.086504 ◽

2012 ◽

Vol 51 (8R) ◽

pp. 086504 ◽

Cited By ~ 25

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

10.1143/jjap.51.086504 ◽

2012 ◽

Vol 51 ◽

pp. 086504 ◽

Cited By ~ 10

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists

10.1116/1.1542616 ◽

2003 ◽

Vol 21 (1) ◽

pp. 254 ◽

Cited By ~ 4

Author(s):

G. P. Patsis ◽

N. Glezos ◽

E. Gogolides

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Gel Formation ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Negative Tone ◽

Chemically Amplified Resists

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Correlation between proton dynamics and line edge roughness in chemically amplified resist for post-optical lithography

10.1116/1.2393250 ◽

2006 ◽

Vol 24 (6) ◽

pp. 3066 ◽

Cited By ~ 14

Author(s):

Akinori Saeki ◽

Takahiro Kozawa ◽

Seiichi Tagawa ◽

Heidi B. Cao

Keyword(s):

Optical Lithography ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Proton Dynamics

Relationship between Line Edge Roughness and Fluctuation of Acid Concentration in Chemically Amplified Resist

10.1143/jjap.49.096506 ◽

2010 ◽

Vol 49 (9) ◽

pp. 096506 ◽

Cited By ~ 3

Author(s):

Takahiro Kozawa ◽

Hiroki Yamamoto ◽

Seiichi Tagawa

Keyword(s):

Acid Concentration ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) ◽

A study of line edge roughness in chemically amplified resist for low energy electron-beam lithography

10.1109/imnc.2001.984209 ◽

2002 ◽

Author(s):

T. Nakasugi ◽

A. Ando ◽

R. Inanami ◽

N. Sasaki ◽

K. Sugihara

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Low Energy ◽

Energy Electron ◽

Line Edge Roughness ◽

Chemically Amplified ◽

Edge Roughness ◽

Low Energy Electron

Effect of molecular weight and protection ratio on line edge roughness and stochastic defect generation in chemically amplified resist processes of extreme ultraviolet lithography

10.7567/jjap.53.084002 ◽

2014 ◽

Vol 53 (8) ◽

pp. 084002 ◽

Cited By ~ 2

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Molecular Weight ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Edge Roughness ◽

On Line ◽

Protection Ratio

Mechanism of amine additive in chemically amplified resist visualized by using Monte Carlo simulation

10.1117/12.210384 ◽

1995 ◽

Cited By ~ 25

Author(s):

Tohru Ushirogouchi ◽

Koji Asakawa ◽

Makoto Nakase ◽

Akinori Hongu

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Chemically Amplified ◽

Chemically Amplified Resist