Experimental electrical characterization of a low-current tip–tip arc discharge in helium atmosphere at very high pressure

2010 ◽  
Vol 19 (4) ◽  
pp. 045010 ◽  
Author(s):  
L Fulcheri ◽  
V Rohani ◽  
F Fabry ◽  
N Traisnel
Keyword(s):  
High Pressure ◽  
Arc Discharge ◽  
Electrical Characterization ◽  
Helium Atmosphere ◽  
Very High

Electrical characterization of a quartz crystal in high pressure CO2 by impedance analysis

2010 ◽  
Vol 30 (1) ◽  
pp. 72-77 ◽  
Author(s):  
Marc Cassiède ◽  
Jérôme Pauly ◽  
Jean-Hugues Paillol ◽  
Jean-Luc Daridon
Keyword(s):  
High Pressure ◽  
Quartz Crystal ◽  
Electrical Characterization ◽  
Impedance Analysis ◽  
High Pressure Co2

scholarly journals Individualization and Electrical Characterization of SiGe Nanowires

2012 ◽  
Vol 1408 ◽  
Author(s):  
M. Monasterio ◽  
A. Rodríguez ◽  
T. Rodríguez ◽  
C. Ballesteros
Keyword(s):  
Electrical Characterization ◽  
Ex Situ ◽  
Electrical Measurements ◽  
Measured Resistance ◽  
Single Nanowires ◽  
Very High

ABSTRACTSiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective.

scholarly journals Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates

1999 ◽  
Vol 4 (S1) ◽  
pp. 411-416 ◽  
Author(s):  
L.J. Schowalter ◽  
Y. Shusterman ◽  
R. Wang ◽  
I. Bhat ◽  
G. Arunmozhi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Electrical Characterization ◽  
High Quality ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Image Position ◽  
Nitride Layers ◽  
Very High

High quality, epitaxial growth of AlN and AlxGa1−xN by OMVPE has been demonstrated on single-crystal AlN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [100] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.

Electrical Characterization of High-Pressure Reactive Sputtered Sc2O3 Films on Silicon

2019 ◽  
Vol 28 (1) ◽  
pp. 287-297 ◽  
Author(s):  
Helena Castán ◽  
Salvador Dueñas ◽  
Alfonso Gómez ◽  
Héctor García ◽  
Luis Bailón ◽  
...  
Keyword(s):  
High Pressure ◽  
Electrical Characterization

Dry reforming of methane in a tip–tip arc discharge reactor at very high pressure

2015 ◽  
Vol 40 (8) ◽  
pp. 3388-3401 ◽  
Author(s):  
Samuel A. Iwarere ◽  
Vandad-Julien Rohani ◽  
Deresh Ramjugernath ◽  
Laurent Fulcheri
Keyword(s):  
High Pressure ◽  
Arc Discharge ◽  
Dry Reforming ◽  
Dry Reforming Of Methane ◽  
Very High

Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates

1998 ◽  
Vol 537 ◽  
Author(s):  
L.J. Schowalter ◽  
Y. Shusterman ◽  
R. Wang ◽  
I. Bhat ◽  
G. Arunmozhi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Electrical Characterization ◽  
High Quality ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Nitride Layers ◽  
Very High

AbstractHigh quality, epitaxial growth of AlN and AlxGal-xN by OMVPE has been demonstrated on single-crystal AIN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [1010] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.

scholarly journals A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model

2019 ◽  
Vol 70 (2) ◽  
pp. 145-151
Author(s):  
Mourad Hebali ◽  
Menaouer Bennaoum ◽  
Mohammed Berka ◽  
Abdelkader Baghdad Bey ◽  
Mohammed Benzohra ◽  
...  
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Electrical Characterization ◽  
Electrical Performance ◽  
Subthreshold Slope ◽  
Ultra Low Power ◽  
Dg Mosfet ◽  
Subthreshold Operation ◽  
Very High

Abstract In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of pA order, very high ON/OFF ratio of and high subthreshold slope of order 0.1 V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor.

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