Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates

1998 ◽  
Vol 537 ◽  
Author(s):  
L.J. Schowalter ◽  
Y. Shusterman ◽  
R. Wang ◽  
I. Bhat ◽  
G. Arunmozhi ◽  
...  

AbstractHigh quality, epitaxial growth of AlN and AlxGal-xN by OMVPE has been demonstrated on single-crystal AIN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [1010] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.

1999 ◽  
Vol 4 (S1) ◽  
pp. 411-416 ◽  
Author(s):  
L.J. Schowalter ◽  
Y. Shusterman ◽  
R. Wang ◽  
I. Bhat ◽  
G. Arunmozhi ◽  
...  

High quality, epitaxial growth of AlN and AlxGa1−xN by OMVPE has been demonstrated on single-crystal AlN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [100] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.


2021 ◽  
Vol 10 (1) ◽  
pp. 1
Author(s):  
Jianhui Wu ◽  
Cailian Du ◽  
Jieming Zhang ◽  
Bo Yang ◽  
Andrew G. S. Cuthbertson ◽  
...  

Nanotechnology is increasingly being used in areas of pesticide production and pest management. This study reports the isolation and virulence of a new Metarhizium anisopliae isolate SM036, along with the synthesis and characterization of M. anisopliae–chitosan nanoparticles followed by studies on the efficacy of nanoparticles against Plutella xylostella. The newly identified strain proved pathogenic to P. xylostella under laboratory conditions. The characterization of M. anisopliae–chitosan nanoparticles through different analytical techniques showed the successful synthesis of nanoparticles. SEM and HRTEM images confirmed the synthesis of spherical-shaped nanoparticles; X-ray diffractogram showed strong peaks between 2θ values of 16–30°; and atomic force microscopy (AFM) analysis revealed a particle size of 75.83 nm for M. anisopliae–chitosan nanoparticles, respectively. The bioassay studies demonstrated that different concentrations of M. anisopliae–chitosan nanoparticles were highly effective against second instar P. xylostella under laboratory and semi-field conditions. These findings suggest that M. anisopliae–chitosan nanoparticles can potentially be used in biorational P. xylostella management programs.


2012 ◽  
Vol 59 (3) ◽  
pp. 154-159
Author(s):  
Djurica Grga ◽  
Marina Marjanovic ◽  
Igor Hut ◽  
Bojan Dzeletovic ◽  
Djuro Koruga

Emerging technologies and new nanoscale information have potential to transform dental practice by improving all aspects of diagnostics and therapy. Nanocharacterization allows understanding of oral diseases at molecular and cellular levels which eventually can increase the success of prevention and treatment. Opto-magnetic spectroscopy (OMS) is a promising new technique based on light-matter interaction which allows insight into the quantum state of matter. Since biomolecules and tissues are usually paramagnetic or diamagnetic materials it is possible to determine the dynamics of para-and diamagnetism at different teeth structures using that method. The topography of the surface of a sample can be obtained with a very high resolution using atomic force microscopy (AFM), which allows observation of minimal changes up to 10 nm, while magnetic force microscopy (MFM) is used to record the magnetic field gradient and its distribution over the surface of a sample. The aim of this study was to determine the possibility of AFM and MFM for the characterization of dental calculus, and a potential application of OMS for the detection of subgingival dental calculus.


2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3


2021 ◽  
Author(s):  
Somayeh Asgary ◽  
Amir Hoshang Ramezani ◽  
Zhaleh Ebrahimi Nejad

Abstract WS2 flakes have been grown successfully on SiO2 substrate via chemical vapor (CVD) deposition method by reduction and sulfurization of WO3 using Ar/ H2 gas and sulfur evaporated from solid sulfur powder. The prepared samples were characterized by optical microscopy (OM), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectra and photoluminescence (PL). Large domain WS2 monolayers are obtained by extending the growth time. The perfect triangular single-crystalline WS2 flakes with an average length of more than 35 µm were achieved. The sharp PL peak (∼1.98 eV) and two distinct Raman peaks (E2g and A1g) with a ∼ 71.5 cm-1 peak split indicating that relatively high quality WS2 crystals with a regular triangle shape can be synthesized. Higher growth time shows larger triangular-shaped of WS2.


1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.


1998 ◽  
Vol 73 (21) ◽  
pp. 3114-3116 ◽  
Author(s):  
Alexander Olbrich ◽  
Bernd Ebersberger ◽  
Christian Boit

2000 ◽  
Vol 662 ◽  
Author(s):  
Elizabeth E. Shen ◽  
Hsin-Lung Chen ◽  
Balaji Narasimhan

AbstractThis research examines the microstructure of polyanhydride blends for use in drug delivery devices. Atomic force microscopy (AFM) and small-angle X-ray scattering (SAXS) studies were performed on the homopolymers and blends of the polyanhydrides poly(1,6-carboxyphenoxy hexane) (CPH) and poly(sebacic anhydride) (SA). AFM of the CPH/SA blends 20:80, 50:50, and 80:20 showed distinct patterns indicating spinodal decomposition and phase separation on the micron-scale. Because it has been shown that incorporated drugs will thermodynamically partition into phase-separated domains depending on their hydrophobicity, polyanhydride blends will be able to encapsulate larger bioactive compounds including nucleotides, proteins, and vaccines. Preliminary SAXS studies of the CPH/SA blend systems provide information on the crystalline morphology of the polymer. A peak shift to a lower q from poly(SA) to the blends indicates that the poly(CPH) is incorporated into and causes swelling of the interlamellar amorphous regions of poly(SA).


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