Deposition of high quality amorphous silicon films with strong hydrogen diluted silane as reactant gas source

1993 ◽  
Vol 2 (11) ◽  
pp. 807-815 ◽  
Author(s):  
He Yu-liang ◽  
Liu Xiang-na ◽  
Yin Cheng-zhong ◽  
Zhang Yu
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
High Quality ◽  
Gas Source

Production of high‐quality amorphous silicon films by evaporative silane surface decomposition

1988 ◽  
Vol 64 (6) ◽  
pp. 3215-3223 ◽  
Author(s):  
J. Doyle ◽  
R. Robertson ◽  
G. H. Lin ◽  
M. Z. He ◽  
A. Gallagher
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
High Quality ◽  
Surface Decomposition

High Quality Amorphous Silicon Films Prepared by Atmospheric-Pressure Photo-CVD

1988 ◽  
Vol 27 (Part 2, No. 6) ◽  
pp. L948-L950 ◽  
Author(s):  
Woo Yeol Kim ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Silicon Films ◽  
High Quality

High quality hydrogenated amorphous silicon films by windowless hydrogen discharge

1990 ◽  
Vol 57 (5) ◽  
pp. 484-486 ◽  
Author(s):  
Akira Yoshida ◽  
Katsushi Inoue ◽  
Haruhiko Ohashi ◽  
Yoji Saito
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
High Quality ◽  
Hydrogen Discharge ◽  
Hydrogenated Amorphous

Growth of high quality amorphous silicon films with significantly improved stability

1994 ◽  
Vol 64 (14) ◽  
pp. 1862-1864 ◽  
Author(s):  
Vikram L. Dalal ◽  
E. X. Ping ◽  
Sanjeev Kaushal ◽  
Mohan K. Bhan ◽  
Mark Leonard
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
High Quality ◽  
Improved Stability

High-quality p–n junction fabrication by ion implantation using the LPCVD amorphous silicon films

Vacuum ◽  
2003 ◽  
Vol 70 (2-3) ◽  
pp. 81-85
Author(s):  
Bohdan Jaroszewicz ◽  
Tadeusz Budzyński ◽  
Andrzej Panas ◽  
Andrzej Kociubinski ◽  
Wojciech Słysz ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Silicon Films ◽  
High Quality

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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