High quality amorphous silicon films prepared by atmospheric-pressure photo-CVD

1988 ◽  
Author(s):  
W.Y. Kim ◽  
M. Konagai ◽  
K. Takahashi
Keyword(s):  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Silicon Films ◽  
High Quality

High Quality Amorphous Silicon Films Prepared by Atmospheric-Pressure Photo-CVD

1988 ◽  
Vol 27 (Part 2, No. 6) ◽  
pp. L948-L950 ◽  
Author(s):  
Woo Yeol Kim ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Silicon Films ◽  
High Quality

Deposition of high quality amorphous silicon films with strong hydrogen diluted silane as reactant gas source

1993 ◽  
Vol 2 (11) ◽  
pp. 807-815 ◽  
Author(s):  
He Yu-liang ◽  
Liu Xiang-na ◽  
Yin Cheng-zhong ◽  
Zhang Yu
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
High Quality ◽  
Gas Source

Production of high‐quality amorphous silicon films by evaporative silane surface decomposition

1988 ◽  
Vol 64 (6) ◽  
pp. 3215-3223 ◽  
Author(s):  
J. Doyle ◽  
R. Robertson ◽  
G. H. Lin ◽  
M. Z. He ◽  
A. Gallagher
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
High Quality ◽  
Surface Decomposition

High quality hydrogenated amorphous silicon films by windowless hydrogen discharge

1990 ◽  
Vol 57 (5) ◽  
pp. 484-486 ◽  
Author(s):  
Akira Yoshida ◽  
Katsushi Inoue ◽  
Haruhiko Ohashi ◽  
Yoji Saito
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
High Quality ◽  
Hydrogen Discharge ◽  
Hydrogenated Amorphous

Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates

2015 ◽  
Vol 51 (21) ◽  
pp. 4417-4420 ◽  
Author(s):  
Zhongrong Shen ◽  
Takashi Masuda ◽  
Hideyuki Takagishi ◽  
Keisuke Ohdaira ◽  
Tatsuya Shimoda
Keyword(s):  
Thermal Decomposition ◽  
Amorphous Silicon ◽  
High Throughput ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Cost Reduction ◽  
Film Formation ◽  
Silicon Film ◽  
High Quality ◽  
Amorphous Silicon Film

Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350–400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.

scholarly journals Ultrahigh-rate Deposition of Amorphous Silicon Films for Solar Cells by Atmospheric Pressure Plasma CVD.

2002 ◽  
Vol 68 (8) ◽  
pp. 1077-1081 ◽  
Author(s):  
Yuzo MORI ◽  
Hiroaki KAKIUCHI ◽  
Kumayasu YOSHII ◽  
Kiyoshi YASUTAKE ◽  
Mitsuhiro MATSUMOTO ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Silicon Films ◽  
Plasma Cvd ◽  
Pressure Plasma

Growth of high quality amorphous silicon films with significantly improved stability

1994 ◽  
Vol 64 (14) ◽  
pp. 1862-1864 ◽  
Author(s):  
Vikram L. Dalal ◽  
E. X. Ping ◽  
Sanjeev Kaushal ◽  
Mohan K. Bhan ◽  
Mark Leonard
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
High Quality ◽  
Improved Stability

High-quality p–n junction fabrication by ion implantation using the LPCVD amorphous silicon films

Vacuum ◽  
2003 ◽  
Vol 70 (2-3) ◽  
pp. 81-85
Author(s):  
Bohdan Jaroszewicz ◽  
Tadeusz Budzyński ◽  
Andrzej Panas ◽  
Andrzej Kociubinski ◽  
Wojciech Słysz ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Silicon Films ◽  
High Quality
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