scholarly journals Electrical properties, equations of state and phase transition in solid C 60 at high pressure

2000 ◽  
Vol 9 (9) ◽  
pp. 676-679 ◽  
Author(s):  
Bao Zhong-xing ◽  
V H Schmidt ◽  
N S Dalal ◽  
C S Tu ◽  
N J Pinto ◽  
...  
2007 ◽  
Vol 19 (42) ◽  
pp. 425223 ◽  
Author(s):  
Chunyuan He ◽  
C X Gao ◽  
B G Liu ◽  
M Li ◽  
X W Huang ◽  
...  

2010 ◽  
Vol 638-642 ◽  
pp. 1053-1058 ◽  
Author(s):  
Tsutomu Mashimo

Through the measurement of Hugoniot parameters, we can get useful information about high-pressure phase transitions, equations of state (EOS), etc. of solids, without pressure calibration. And, we can discuss the transition dynamics, because the relaxation times of phase transition and compression process are of the same order. We have performed the Hugoniot-measurement experiments on various kinds of compound materials including oxides, nitrides, borides and chalcogenides by using a high time-resolution streak photographic system combined with the propellant guns. The structure-phase transitions have been observed for several kinds of inorganic materials, TiO2, ZrO2, Gd3Ga5O12, AlN, ZnS, ZnSe, etc. The phase transition pressures under shock and static compressions of metals, ionic materials, semiconductors and some ceramics are consistent with each other. Those are not consistent for strong covalent bonding materials such as C, BN and SiO2. Here, the Hugoniot compression data are reviewed, and the shock-induced phase transitions and the dynamics are discussed, as well as the EOS of the high-pressure phase up to evem 1 TPa.


Author(s):  
Martin Etter ◽  
Melanie Müller ◽  
Michael Hanfland ◽  
Robert E. Dinnebier

Sequential Rietveld refinements were applied on high-pressure synchrotron powder X-ray diffraction measurements of lanthanum ferrite (LaFeO3) revealing two phase transitions on the room-temperature isotherm up to a pressure of 48 GPa. The first structural phase transition of second order occurs at a pressure of 21.1 GPa, changing the space group fromPbnmtoIbmm. The second transition, involving a isostructural first-order phase transition, occurs at approximately 38 GPa, indicating a high-spin to low-spin transition of the Fe3+ion. Following the behavior of the volume up to the hydrostatic limit of methanol–ethanol it was possible to use inverted equations of state (EoS) to determine a bulk modulus ofB0= 172 GPa and a corresponding pressure derivative ofB′0= 4.3. In addition, the linearized version of the inverted EoS were used to determine the corresponding moduli and pressure derivatives for each lattice direction.


2020 ◽  
Vol 22 (6) ◽  
pp. 3352-3369 ◽  
Author(s):  
Vanesa Paula Cuenca-Gotor ◽  
Juan Ángel Sans ◽  
Oscar Gomis ◽  
Andres Mujica ◽  
Silvana Radescu ◽  
...  

Orpiment (α-As2S3) under compression reports a strong change in the coordination of As atoms at 25 GPa, which can be ascribed to an isostructural phase transition. These changes are consistent with the formation of metavalent bonds in orpiment.


Author(s):  
Kun Li ◽  
Junjie Wang ◽  
Vladislav A. Blatov ◽  
Yutong Gong ◽  
Naoto Umezawa ◽  
...  

AbstractAlthough tin monoxide (SnO) is an interesting compound due to its p-type conductivity, a widespread application of SnO has been limited by its narrow band gap of 0.7 eV. In this work, we theoretically investigate the structural and electronic properties of several SnO phases under high pressures through employing van der Waals (vdW) functionals. Our calculations reveal that a metastable SnO (β-SnO), which possesses space group P21/c and a wide band gap of 1.9 eV, is more stable than α-SnO at pressures higher than 80 GPa. Moreover, a stable (space group P2/c) and a metastable (space group Pnma) phases of SnO appear at pressures higher than 120 GPa. Energy and topological analyses show that P2/c-SnO has a high possibility to directly transform to β-SnO at around 120 GPa. Our work also reveals that β-SnO is a necessary intermediate state between high-pressure phase Pnma-SnO and low-pressure phase α-SnO for the phase transition path Pnma-SnO →β-SnO → α-SnO. Two phase transition analyses indicate that there is a high possibility to synthesize β-SnO under high-pressure conditions and have it remain stable under normal pressure. Finally, our study reveals that the conductive property of β-SnO can be engineered in a low-pressure range (0–9 GPa) through a semiconductor-to-metal transition, while maintaining transparency in the visible light range.


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


Author(s):  
Linfei Yang ◽  
Jianjun Jiang ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Meiling Hong ◽  
...  

The vibrational, electrical and structural properties of Ga2S3 were explored by Raman spectroscopy, EC measurements, HRTEM and First-principles theoretical calculations under different pressure environments up to 36.4 GPa.


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