Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems

A high-efficiency low-power chip-based liquid crystal (LC) driver has been successfully designed and implemented for adaptive electro-optic eyewear including tunable vision correction devices (eyeglass, contact lens, intraocular lens, occluder, and prism), phoropter, iris, head-mounted display, and 3D imaging. The driver can generate a 1 kHz bipolar square wave with magnitude tunable from 0 V to 15 V to change the lens focus adaptively. The LC driver output magnitude is controlled by a reference DC voltage that is manually tunable between 0 and 3 V. A multi-mode 1×/2×/3×/4×/5× charge pump is developed for DC-DC conversion to expand the output range with a fast-sink function implemented to regulate the charge pump output. In addition, a new four-phase H-bridge driving scheme is employed to improve the DC/AC inverter efficiency. The LC driver has been successfully implemented and tested as an IC chip (8.6 mm × 8.6 mm) using AMS 0.18 μm High-Voltage CMOS technology.

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Epitaxial ferroelectric thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170591 ◽

1994 ◽

Vol 52 ◽

pp. 572-573

Author(s):

S. G. Ghonge ◽

E. Goo ◽

R. Ramesh ◽

R. Haakenaasen ◽

D. K. Fork

Keyword(s):

Single Crystal ◽

Work Function ◽

Nonvolatile Memory ◽

Ferroelectric Properties ◽

Electrical Contact ◽

Memory Devices ◽

Ferroelectric Films ◽

Si Substrates ◽

Electro Optic ◽

Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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