In-situ second-harmonic generation study of the molecular beam epitaxy growth of GaAs

1995 ◽  
Vol 150 ◽  
pp. 92-95
Author(s):  
Takahiro Kimura ◽  
Chikashi Yamada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Molecular Beam ◽  
Second Harmonic ◽  
Molecular Beam Epitaxy Growth

scholarly journals Nonlinear optical diagnostics crystal structure of semiconductor films in molecular beam epitaxy

2021 ◽  
Keyword(s):  
Crystal Structure ◽  
Molecular Beam Epitaxy ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Nonlinear Optical ◽  
Molecular Beam ◽  
Second Harmonic ◽  
Universal Method ◽  
Semiconductor Films ◽  
Control And Management

The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the struc-tural perfection of semiconductor films during their synthesis in an MBE device for second harmonic generation (SH) using a repetitively pulsed YAG: Nd laser is presented.

scholarly journals An in situ study of reconstructed gold electrode surfaces by second harmonic generation

1989 ◽  
Vol 163 (2-3) ◽  
pp. 123-128 ◽  
Author(s):  
A. Friedrich ◽  
B. Pettinger ◽  
D.M. Kolb ◽  
G. Lüpke ◽  
R. Steinhoff ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Gold Electrode ◽  
Second Harmonic ◽  
Electrode Surfaces ◽  
In Situ Study
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