Role of limited hydrogen and flow interval on the growth of single crystal to continuous graphene by low-pressure chemical vapor deposition

2017 ◽  
Vol 28 (7) ◽  
pp. 075602 ◽  
Author(s):  
Munu Borah ◽  
Abhishek K Pathak ◽  
Dilip K Singh ◽  
Prabir Pal ◽  
Sanjay R Dhakate
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Cu hill and graphene grain evolution in the synthesis of millimeter-sized single crystal graphene during low pressure chemical vapor deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (62) ◽  
pp. 32941-32945 ◽  
Author(s):  
Shuya Zhu ◽  
Quanfu Li ◽  
Qian Chen ◽  
Weihua Liu ◽  
Xin Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

The evolution of Cu hills beneath graphene grains during the growth of millimeter scale single crystal graphene using low pressure chemical vapor deposition (LPCVD) was investigated.

scholarly journals Piezo-Hall effect in single crystal p-type 3C–SiC(100) thin film grown by low pressure chemical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31191-31195 ◽  
Author(s):  
Afzaal Qamar ◽  
H.-P. Phan ◽  
Toan Dinh ◽  
Li Wang ◽  
Sima Dimitrijev ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Hall Effect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
First Results ◽  
Pressure Chemical ◽  
P Type

This article reports the first results on piezo-Hall effect in single crystal p-type 3C–SiC(100) Hall devices.

Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition

2013 ◽  
Vol 25 (14) ◽  
pp. 2062-2065 ◽  
Author(s):  
Shanshan Chen ◽  
Hengxing Ji ◽  
Harry Chou ◽  
Qiongyu Li ◽  
Hongyang Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Evaporative Loss

Thermal Expansion of Low-pressure Chemical Vapor Deposition Polysilicon Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1855-1862 ◽  
Author(s):  
H. Kahn ◽  
R. Ballarini ◽  
A. H. Heuer
Keyword(s):  
Thermal Expansion ◽  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Single Crystal Substrate ◽  
Pressure Chemical ◽  
Polysilicon Films

Polysilicon films were deposited using low-pressure chemical vapor deposition (LPCVD) onto oxidized silicon substrates, after which substrate curvature as a function of temperature was measured. The curvatures changed with temperature, implying that the thermal expansion of LPCVD polysilicon differs from that of the single crystal silicon substrate. Further, polysilicon films with tensile residual stresses displayed an increased thermal expansion, while polysilicon films with compressive residual stresses displayed a decreased thermal expansion. Following high temperature annealing, the residual stresses of the polysilicon films were reduced to near zero, and the thermal expansion of the polysilicon films matched that of the single crystal substrate. The apparent change in thermal expansion coefficient due to residual stress was much larger than predicted theoretically.

Controllable Synthesis of Single-Crystal Monolayer Graphene on Copper Foils by Low-Pressure Chemical Vapor Deposition

2013 ◽  
Vol 562-565 ◽  
pp. 79-84
Author(s):  
Lei Guo ◽  
Xue Kang Chen ◽  
Lan Xi Wang ◽  
Sheng Zhu Cao ◽  
Xiao Hang Bai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Monolayer Graphene ◽  
Controllable Synthesis ◽  
Copper Foils ◽  
Pressure Chemical

~50 μm single crystal graphene with hexagonal flower shape was synthesized on copper foils by low pressure chemical vapor deposition (LPCVD). The strong influence of Cu foils annealing on suppressing the nucleation of graphene was observed. Scanning electron microscopy (SEM), Optical microscopy (OM), and Raman spectrum showed that single crystal graphene as grown was monolayer with high quality. Suppressing nucleation through an annealing procedure offers an promising way to grow large-scale single crystal graphene controllably.

scholarly journals Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition

2017 ◽  
Vol 7 (6) ◽  
pp. 1995 ◽  
Author(s):  
Umar Saleem ◽  
Muhammad Danang Birowosuto ◽  
Noelle Gogneau ◽  
Philippe Coquet ◽  
Maria Tchernycheva ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Green Luminescence ◽  
Gan Nanowires ◽  
Pressure Chemical

Fabrication of single-crystal few-layer graphene domains on copper by modified low-pressure chemical vapor deposition

CrystEngComm ◽  
2014 ◽  
Vol 16 (32) ◽  
pp. 7558-7563 ◽  
Author(s):  
Y. G. Shi ◽  
D. Wang ◽  
J. C. Zhang ◽  
P. Zhang ◽  
X. F. Shi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene

Few-layer graphene domains are fabricated by modified LPCVD on Cu and the growth mechanism is schematically shown in the figure.

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