Effects of Si/SiO2interface stress on the performance of ultra-thin-body field effect transistors: a first-principles study

Nanotechnology ◽

10.1088/1361-6528/aa9a69 ◽

2017 ◽

Vol 29 (2) ◽

pp. 025201 ◽

Author(s):

Hyo-Eun Jung ◽

Mincheol Shin

Keyword(s):

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

Thin Body ◽

First Principles Study

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Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

Applied Physics Letters ◽

10.1063/1.4940685 ◽

2016 ◽

Vol 108 (4) ◽

pp. 043504 ◽

Author(s):

Anh Khoa Augustin Lu ◽

Geoffrey Pourtois ◽

Tarun Agarwal ◽

Aryan Afzalian ◽

Iuliana P. Radu ◽

...

Keyword(s):

Metal Oxide ◽

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

First Principles Study

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Semiconducting α'−boron sheet with high mobility and low all-boron contact resistance: A first-principles study

Nanoscale ◽

10.1039/d1nr00329a ◽

2021 ◽

Author(s):

Jun-Jie Zhang ◽

Tariq Altalhi ◽

Jihui Yang ◽

Boris I Yakobson

Keyword(s):

Contact Resistance ◽

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Two Dimensional ◽

First Principles Study ◽

Metallic Electrodes

Two-dimensional field effect transistors (2D FETs) with high mobility semiconducting channels and low contact resistance between the semiconducting channel and the metallic electrodes are highly sought components of future electronics....

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Field effect transistors based on phosphorene nanoribbon with selective edge-adsorption: A first-principles study

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.12.027 ◽

2018 ◽

Vol 98 ◽

pp. 60-65 ◽

Author(s):

Mengli Hu ◽

Zhixiong Yang ◽

Wenzhe Zhou ◽

Aolin Li ◽

Jiangling Pan ◽

...

Keyword(s):

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

First Principles Study

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A First-Principles Study of Transport Properties in Armchair Germanene Nanoribbon Field Effect Transistors Subject to Metallic Dopants

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/ac26da ◽

2021 ◽

Vol 10 (9) ◽

pp. 091016

Author(s):

Azam Samipour ◽

Daryoosh Dideban

Keyword(s):

Transport Properties ◽

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

First Principles Study

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

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First principles studies on electronic and contact properties of Single layer 2H-MoS2/1T'-MX2 heterojunctions

Physical Chemistry Chemical Physics ◽

10.1039/d1cp05077j ◽

2022 ◽

Author(s):

Jiao Yu ◽

Caijuan Xia ◽

Zhengyang Hu ◽

jianping Sun ◽

Xiaopeng Hao ◽

...

Keyword(s):

Transition Metal ◽

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

Single Layer ◽

Metal Chalcogenides ◽

Two Dimensional ◽

Transition Metal Chalcogenides

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...

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Carbon nanotube field-effect transistors-an example of an ultra-thin body Schottky barrier device

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226919 ◽

2004 ◽

Author(s):

J. Appenzeller ◽

J. Knoch ◽

P. Avouris

Keyword(s):

Carbon Nanotube ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Thin Body ◽

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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131661 ◽

2011 ◽

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

D. Basu ◽

J. Boardman ◽

B. Chu-Kung ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

Thin Body ◽

High K ◽

Ingaas Quantum Well ◽

High K Gate Dielectric

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Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4985610 ◽

2017 ◽

Vol 121 (22) ◽

pp. 224503 ◽

Author(s):

Zhi Wang ◽

Liwei Wang ◽

Yunfei En ◽

Xiang-Wei Jiang

Keyword(s):

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

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Artificial Defects in Si3N4Enhance Nonvolatile Memory Performance of Ultra-Thin Body Poly-Si Junctionless Field-Effect Transistors

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0271604jss ◽

2016 ◽

Vol 5 (4) ◽

pp. P3202-P3205 ◽

Author(s):

Yu-Ru Lin ◽

Wei-Cheng Wang ◽

Lun-Chun Chen ◽

Yung-Chun Wu

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Memory Performance ◽

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