Semiconducting α'−boron sheet with high mobility and low all-boron contact resistance: A first-principles study
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Two-dimensional field effect transistors (2D FETs) with high mobility semiconducting channels and low contact resistance between the semiconducting channel and the metallic electrodes are highly sought components of future electronics....
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2013 ◽
Vol 14
(4)
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pp. 1211-1217
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1984 ◽
Vol 33
(3)
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pp. 183-193
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