Semiconducting α'−boron sheet with high mobility and low all-boron contact resistance: A first-principles study

Nanoscale ◽  
2021 ◽  
Author(s):  
Jun-Jie Zhang ◽  
Tariq Altalhi ◽  
Jihui Yang ◽  
Boris I Yakobson

Two-dimensional field effect transistors (2D FETs) with high mobility semiconducting channels and low contact resistance between the semiconducting channel and the metallic electrodes are highly sought components of future electronics....

Author(s):  
Jiao Yu ◽  
Caijuan Xia ◽  
Zhengyang Hu ◽  
jianping Sun ◽  
Xiaopeng Hao ◽  
...  

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...


Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...


Nanoscale ◽  
2018 ◽  
Vol 10 (11) ◽  
pp. 5191-5197 ◽  
Author(s):  
Shen Lai ◽  
Sung Kyu Jang ◽  
Jeong Ho Cho ◽  
Sungjoo Lee

Pentacene organic field-effect transistors integrated with MXene (Ti2CTx) electrodes are studied. Superior device performance with high mobility, high on/off ratio, and low contact resistance is achieved.


Nanoscale ◽  
2017 ◽  
Vol 9 (48) ◽  
pp. 19390-19397 ◽  
Author(s):  
E. G. Marin ◽  
D. Marian ◽  
G. Iannaccone ◽  
G. Fiori

We explore nanoribbons from topological two-dimensional stanene as a channel material in tunnel field effect transistors, opening the possibility of building pure one-dimensional channel devices.


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