Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

Source Separation ◽

Thin Body ◽

High K ◽

Well Field ◽

Ingaas Quantum Well ◽

Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

2010 International Electron Devices Meeting ◽

10.1109/iedm.2010.5703306 ◽

2010 ◽

Cited By ~ 57

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

J. M. Fastenau ◽

J. Kavalieros ◽

R. Kotlyar ◽

...

Keyword(s):

Quantum Well ◽

Low Power ◽

Field Effect ◽

Gate Dielectric ◽

Source Separation ◽

High K ◽

Well Field ◽

Low Power Logic ◽

Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424361 ◽

2009 ◽

Cited By ~ 48

Author(s):

M. Radosavljevic ◽

B. Chu-Kung ◽

S. Corcoran ◽

G. Dewey ◽

M. K. Hudait ◽

...

Keyword(s):

Quantum Well ◽

Silicon Substrate ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Short Channel ◽

High K ◽

Well Field ◽

Low Power Logic

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

Nanoscale ◽

10.1039/c5nr01072a ◽

2015 ◽

Vol 7 (19) ◽

pp. 8695-8700 ◽

Cited By ~ 86

Author(s):

Changjian Zhou ◽

Xinsheng Wang ◽

Salahuddin Raju ◽

Ziyuan Lin ◽

Daniel Villaroman ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Gate Dielectric ◽

Low Voltage ◽

Power Device ◽

Enhancement Mode ◽

High K ◽

Ultra high-k dielectric enables low-voltage enhancement-mode MoS2 transistor with high ON/OFF ratio, leading to low-power device.

On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.3180703 ◽

2009 ◽

Vol 95 (3) ◽

pp. 032101 ◽

Cited By ~ 16

Author(s):

N. Lukyanchikova ◽

N. Garbar ◽

V Kudina ◽

A. Smolanka ◽

S. Put ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

High K ◽

Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors

2010 14th International Workshop on Computational Electronics ◽

10.1109/iwce.2010.5678003 ◽

2010 ◽

Author(s):

Fabio Alessio Marino ◽

Diego Guerra ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti

Keyword(s):

Monte Carlo ◽

Quantum Well ◽

Field Effect ◽

Well Field ◽

Monte Carlo Investigation ◽

Cellular Monte Carlo ◽

Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method

Applied Physics Letters ◽

10.1063/1.1506776 ◽

2002 ◽

Vol 81 (11) ◽

pp. 2050-2052 ◽

Cited By ~ 21

Author(s):

Ga-Won Lee ◽

Jae-Hee Lee ◽

Hae-Wang Lee ◽

Myoung-Kyu Park ◽

Dae-Gwan Kang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Charge Pumping ◽

High K ◽

Metal Oxide Silicon ◽

Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2012.2205214 ◽

2012 ◽

Vol 33 (9) ◽

pp. 1255-1257 ◽

Cited By ~ 8

Author(s):

Fei Xue ◽

Aiting Jiang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Yanzhen Wang ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectrics ◽

Thickness Dependence ◽

Well Field ◽

Channel Thickness ◽

Low Voltage Pentacene Organic Field Effect Transistors with High-K Gate Dielectric

Physics of Semiconductor Devices - Environmental Science and Engineering ◽

10.1007/978-3-319-03002-9_233 ◽

2014 ◽

pp. 905-906 ◽

Cited By ~ 2

Author(s):

Sarita Yadav ◽

Subhasis Ghosh

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Low Voltage ◽

Organic Field Effect Transistors ◽

High K ◽

2014 International Conference on Electrical Engineering and Information & Communication Technology ◽

A semi-analytical model for III-V semiconductor quantum well field effect transistors

10.1109/iceeict.2014.6919039 ◽

2014 ◽

Author(s):

M. S. Rahman ◽

M. S. Islam ◽

A. Haque

Keyword(s):

Quantum Well ◽

Analytical Model ◽

Field Effect ◽

Well Field ◽

Semiconductor Quantum Well

Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Cited By ~ 15

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽