Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

2016 ◽  
Vol 108 (4) ◽  
pp. 043504 ◽  
Author(s):  
Anh Khoa Augustin Lu ◽  
Geoffrey Pourtois ◽  
Tarun Agarwal ◽  
Aryan Afzalian ◽  
Iuliana P. Radu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
First Principles Study

scholarly journals Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Nobutaka Oi ◽  
Masafumi Inaba ◽  
Satoshi Okubo ◽  
Ikuto Tsuyuzaki ◽  
Taisuke Kageura ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Two Dimensional
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