A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin
Keyword(s):  
Metal Oxide ◽  
Diffusion Processes ◽  
Memory Device ◽  
Device Fabrication ◽  
Oxide Material ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Metal Metal ◽  
Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

scholarly journals Reversible resistive switching behaviour in CVD grown, large area MoOx

Nanoscale ◽  
2018 ◽  
Vol 10 (42) ◽  
pp. 19711-19719 ◽  
Author(s):  
Fahmida Rahman ◽  
Taimur Ahmed ◽  
Sumeet Walia ◽  
Edwin Mayes ◽  
Sharath Sriram ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Large Area ◽  
Switching Behaviour

Reversible resistive switching behaviour is observed in MoOx memory devices, at relatively low set/reset voltages, with switching ratios exceeding 103.

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Bottom Electrode ◽  
Low Cost ◽  
Memory Devices ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

2017 ◽  
Vol 19 (29) ◽  
pp. 18988-18995 ◽  
Author(s):  
Sungjun Kim ◽  
Yao-Feng Chang ◽  
Min-Hwi Kim ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Double Layer ◽  
Resistive Switching ◽  
Layered Structure ◽  
Memory Device ◽  
Resistive Memory ◽  
Power Switching ◽  
Ultralow Power

Here we demonstrate low-power resistive switching in a Ni/SiNy/SiNx/p++-Si device by proposing a double-layered structure (SiNy/SiNx), where the two SiN layers have different trap densities.

Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices

2008 ◽  
Vol 47 (4) ◽  
pp. 2701-2703 ◽  
Author(s):  
Li-Feng Liu ◽  
Jin-Feng Kang ◽  
Nuo Xu ◽  
Xiao Sun ◽  
Chen Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics

Flexible resistive switching memory devices composed of solution-processed GeO2:S films

2012 ◽  
Vol 97 ◽  
pp. 122-125 ◽  
Author(s):  
Isaac Chung ◽  
Kyoungah Cho ◽  
Junggwon Yun ◽  
Sangsig Kim
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7535
Author(s):  
Ghulam Dastgeer ◽  
Amir Muhammad Afzal ◽  
Jamal Aziz ◽  
Sajjad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Resistance State ◽  
Building Blocks ◽  
Memory Device ◽  
Memory Storage ◽  
Memory Devices ◽  
Two Dimensional ◽  
Ag Filament ◽  
Resistance State

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.

scholarly journals Reliable Resistive Switching Behaviour of Ag/Ta2O5/Al2O3/p++-Si Memory Device

2020 ◽  
Vol 1637 ◽  
pp. 012021
Author(s):  
Wei Tian ◽  
Nasir Ilyas ◽  
Dongyang Li ◽  
Chunmei Li ◽  
Xiangdong Jiang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Switching Behaviour
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