High responsivity ZnO based p–n homojunction UV-photodetector with series Schottky barrier

2020 ◽  
Vol 35 (6) ◽  
pp. 065001
Author(s):  
Lucky Agarwal ◽  
Shweta Tripathi
Keyword(s):  
Schottky Barrier ◽  
Uv Photodetector ◽  
High Responsivity

Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation

2003 ◽  
Vol 798 ◽  
Author(s):  
Atsushi Motogaito ◽  
Kazumasa Hiramatsu ◽  
Yasuhiro Shibata ◽  
Hironobu Watanabe ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Wavelength Range ◽  
Epitaxial Layer ◽  
Device Performance ◽  
Uv Detectors ◽  
X Ray ◽  
High Responsivity ◽  
Vacuum Uv

ABSTRACTCharacterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al0.5Ga0.5N on AlN epitaxial layer.

scholarly journals Self-Assembled Al Nanostructure/ZnO Quantum Dot Heterostructures for High Responsivity and Fast UV Photodetector

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Sisi Liu ◽  
Ming-Yu Li ◽  
Jianbing Zhang ◽  
Dong Su ◽  
Zhen Huang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Self Assembled

scholarly journals High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

2017 ◽  
Vol 110 (22) ◽  
pp. 221107 ◽  
Author(s):  
Anamika Singh Pratiyush ◽  
Sriram Krishnamoorthy ◽  
Swanand Vishnu Solanke ◽  
Zhanbo Xia ◽  
Rangarajan Muralidharan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Deep Uv

High Responsivity MgxZn1−xO Film UV Photodetector Grown by RF Sputtering

2015 ◽  
Vol 27 (9) ◽  
pp. 978-981 ◽  
Author(s):  
Jyun-Yi Li ◽  
Sheng-Po Chang ◽  
Hung-Hsu Lin ◽  
Shoou-Jinn Chang
Keyword(s):  
Rf Sputtering ◽  
Uv Photodetector ◽  
High Responsivity

scholarly journals Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

2D Materials ◽  
2016 ◽  
Vol 4 (1) ◽  
pp. 015024 ◽  
Author(s):  
Antonio Di Bartolomeo ◽  
Filippo Giubileo ◽  
Giuseppe Luongo ◽  
Laura Iemmo ◽  
Nadia Martucciello ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Optoelectronic Device ◽  
High Responsivity

Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes

2014 ◽  
Vol 2 (45) ◽  
pp. 9689-9694 ◽  
Author(s):  
Hong-Yu Chen ◽  
Ke-Wei Liu ◽  
Xing Chen ◽  
Zhen-Zhong Zhang ◽  
Ming-Ming Fan ◽  
...  
Keyword(s):  
Metal Structure ◽  
The Other ◽  
Interdigitated Electrode ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Metal Semiconductor Metal ◽  
Self Powered

We demonstrate a novel ZnO self-powered photodetector based on the asymmetric metal-semiconductor-metal structure: one Au interdigitated electrode with wide fingers and the other one with narrow fingers.

Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

2001 ◽  
Vol 693 ◽  
Author(s):  
Atsushi Motogaito ◽  
Keiichi Ohta ◽  
Kazumasa Hiramatsu ◽  
Youichiro Ohuchi ◽  
Kazuyuki Tadatomo ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Penetration Depth ◽  
Transparent Electrode ◽  
Electrode Structure ◽  
Uv Detectors ◽  
High Responsivity ◽  
Schottky Type

AbstractCharacterization of Schottky barrier UV detectors with a comb-shaped electrode and a transparent electrode for VUV region using synchrotron radiation was carried out. These Schottky type detectors are effective to operate in UV and VUV light (50<l >360 nm). In particular, the latter realizes high responsivity (0.01 A/W for VUV light) and no photoemission of Au and GaN. The penetration depth for VUV light was estimated to 0.01 m. So the VUV light was absorbed in near the surface of i-GaN layer or the interface of Au and i-GaN layer.

A High-Responsivity GaN Nanowire UV Photodetector

2011 ◽  
Vol 17 (4) ◽  
pp. 996-1001 ◽  
Author(s):  
W. Y. Weng ◽  
T. J. Hsueh ◽  
S. J. Chang ◽  
S. B. Wang ◽  
H. T. Hsueh ◽  
...  
Keyword(s):  
Uv Photodetector ◽  
High Responsivity ◽  
Gan Nanowire
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