Deep level defects and their instability in PLD-grown IGZO (In2Ga2Zn5O11) thin films studied by thermally stimulated current spectroscopy

2020 ◽  
Vol 35 (12) ◽  
pp. 124002
Author(s):  
Buguo Wang ◽  
David Look ◽  
Jason Anders ◽  
Kevin Leedy ◽  
Michael Schuette
1990 ◽  
Vol 209 ◽  
Author(s):  
X.J. Bao ◽  
T.E. Schlesinger ◽  
R.B. James ◽  
A.Y. Cheng ◽  
C. Olrtale ◽  
...  

ABSTRACTMercuric iodide (HgI2) single crystals deposited with semitransparent Pd, Al and Ag contacts were studied by thermally stimulated current spectroscopy (TSC). Distinct differences were found among spectra obtained friom samples withdifferentmetal contacts, indicating that interactions between the metal contacts and mercuric iodide substrates have strong effects on the deep defect levels in mercuric iodide. The activation energies of some of these defect levels were estimated bytaking TSC spectra with different heating rates. In addition, a pyroelectric effect was observed in Ag-contactedsamplesbythermally stimulated depolarization current technique (TSDC). The implications of these results in device applicationsof mercuric iodide are discussed.


2021 ◽  
Vol 0 (1) ◽  
pp. 75-80
Author(s):  
A.V. MOSHELEV ◽  
◽  
A.F. PONOMAREV ◽  
S.N. SALAZKIN ◽  
V.V. SHAPOSHNIKOVA ◽  
...  

Trapping state parameters in thin films of polyarylenephthalide polymers with different chemical structures were studied using the thermally stimulated current (TSC) method. As the objects of our research we used polyarylenephthalide polymers - polydiphenylphthalide (PDP) [1] and phthalide-based statistical co-polyarylene ether ketones (co-PAEK) [2]. It was revealed in the paper that the energy of trapping state activation essentially depends on the concentration of phhalide-containing fragments.


1993 ◽  
Vol 310 ◽  
Author(s):  
L.A. Wills ◽  
B.W. Wessels

AbstractThe defect structure of BaTiO3 thin films grown on (100) Si was examined using transient photocapacitance spectroscopy. The concentration, optical cross section and associated energy levels of both native and impurity defects in as-grown and annealed BaTiO3 films were evaluated. Deep level defects withpeak energies of Ev+1.8, Ev+2.4, Ev+2.7, Ev+3.0-3.1 and Ev+3.2-3.3 eV were observed in the as-grown films. Upon vacuum annealing, the concentration of the traps at Ev+3.0 and Ev+3.2 eV increased while the concentration of the traps at Ev+ 1.8 and Ev+2.4 eV decreased. The levels at Ev+3.0-3.1 and Ev+3.2-3.3 eV are attributed to oxygen vacancies. The other levels are tentatively ascribed to Fe and Fe related defects.


2010 ◽  
Vol 43 (34) ◽  
pp. 345104 ◽  
Author(s):  
Ruihua Nan ◽  
Wanqi Jie ◽  
Gangqiang Zha ◽  
Tao Wang ◽  
Yadong Xu ◽  
...  

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