Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

1999 ◽  
Vol 567 ◽  
Author(s):  
S. C. Song ◽  
C. H. Lee ◽  
H. F. Luan ◽  
D. L. Kwong ◽  
M. Gardner ◽  
...  
Keyword(s):  
High Pressure ◽  
Gate Dielectrics ◽  
Nitrogen Concentration ◽  
Budget Process ◽  
High Nitrogen ◽  
High Quality ◽  
Thermal Budget ◽  
Hot Carrier ◽  
Low Thermal Budget ◽  
High Nitrogen Concentration

ABSTRACTIn this paper, we report a novel low thermal budget process (<800°C) for engineered ultra thin oxynitride dielectrics with high nitrogen concentration (>5% a.c.) using vertical high pressure (VHP) process. VHP grown oxynitride films show >1 OX lower leakage current, higher drive current and superior hot-carrier reliability compared to control SiO2 of identical thickness (Tox,eq) grown by RTP in O2.

Lattice deformation of ZnO films with high nitrogen concentration

2008 ◽  
Vol 254 (23) ◽  
pp. 7972-7975 ◽  
Author(s):  
S.H. Park ◽  
J.H. Chang ◽  
H.J. Ko ◽  
T. Minegishi ◽  
J.S. Park ◽  
...  
Keyword(s):  
Nitrogen Concentration ◽  
Zno Films ◽  
Lattice Deformation ◽  
High Nitrogen ◽  
High Nitrogen Concentration

Nitrogen removal from water containing high nitrate nitrogen in a paddy field (wetland)

2003 ◽  
Vol 48 (10) ◽  
pp. 209-216 ◽  
Author(s):  
H. Nakasone ◽  
H. Kuroda ◽  
T. Kato ◽  
T. Tabuchi
Keyword(s):  
Ground Water ◽  
River Water ◽  
Green Tea ◽  
Nitrogen Removal ◽  
Nitrate Nitrogen ◽  
Nitrogen Concentration ◽  
Spring Water ◽  
Paddy Fields ◽  
High Nitrogen ◽  
High Nitrogen Concentration

Nowadays, it has become very common to find in Japan that nitrate nitrogen concentrations are very high in spring water and in well water where the land use of a watershed is agricultural. We have often observed around 50 mg/L of nitrate nitrogen in the spring water where we live. Crops produced in those fields are mainly vegetables such as celery, cabbage, lettuce, carrots, and so on. Green tea is also popular in Japan. In order to produce good quality green tea, farmers apply a great amount of nitrogen fertilizer. This amount can reach up to 1,000 kg/ha in some areas, although the average application amounts to 628 kg/ha in Japan. As a result, ground water that is rich in nitrate flows into the river, which results in a high nitrogen concentration in river water and ground water. Further, this causes a low pH in river water in some tributary rivers in Japan, though this kind of case is very rare. We knew from field tests that if water contained a high nitrogen concentration and was introduced into paddy fields, high nitrogen removal would be performed. This paper presents the outline and results of a system on how to remove nitrogen using paddy fields (wetlands). Further, this paper presents the evaluated results of the removal quantity at the watershed level.

scholarly journals Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-x Sn x on SiO2 fabricated by a low thermal budget process

2019 ◽  
Vol 12 (5) ◽  
pp. 051016
Author(s):  
Kouta Takahashi ◽  
Hiroshi Ikenoue ◽  
Mitsuo Sakashita ◽  
Osamu Nakatsuka ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Generator ◽  
Budget Process ◽  
Thermal Budget ◽  
Low Thermal Budget

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

1995 ◽  
Vol 387 ◽  
Author(s):  
L. K. Han ◽  
M. Bhat ◽  
J. Yan ◽  
D. Wristers ◽  
D. L. Kwong
Keyword(s):  
Gate Dielectric ◽  
Defect Density ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Interface State ◽  
High Quality ◽  
Hot Carrier ◽  
Thermal Oxide ◽  
State Generation

AbstractThis paper reports on the formation of high quality ultrathin oxynitride gate dielectric by in-situ rapid thermal multiprocessing. Four such gate dielectrics are discussed here; (i) in-situ NO-annealed SiO2, (ii) N2O- or NO- or O2-grown bottom oxide/RTCVD SiO2/thermal oxide, (iii) N2O-grown bottom oxide/Si3N4/N2O-oxide (ONO) and (iv) N2O-grown bottom oxide/RTCVD SiO2/N2O-oxide. Results show that capacitors with NO-based oxynitride gate dielectrics, stacked oxynitride gate dielectrics with varying quality of bottom oxide (O2/N2O/NO), and the ONO structures show high endurance to interface degradation, low defect-density and high charge-to-breakdown compared to thermal oxide. The N2O-last reoxidation step used in the stacked dielectrics and ONO structures is seen to suppress charge trapping and interface state generation under Fowler-Nordheim injection. The stacked oxynitride gate dielectrics also show excellent MOSFET performance in terms of transconductance and mobility. While the current drivability and mobilities are found to be comparable to thermal oxide for N-channel MOSFET's, the hot-carrier immunity of N-channel MOSFET's with the N2O-oxide/CVD-SiO2/N2O-oxide gate dielectrics is found to be significantly enhanced over that of conventional thermal oxide.

Effect of Ni70Mn25Co5 or Fe55Ni29Co16 on the Growth of Type-II a Large Diamonds with Al as Nitrogen Getter

2011 ◽  
Vol 266 ◽  
pp. 89-92
Author(s):  
Shang Sheng Li ◽  
Ning Luo ◽  
Xiao Lei Li ◽  
Tai Chao Su ◽  
You Mou Zhou ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Pressure ◽  
High Temperature ◽  
Temperature Gradient ◽  
Nitrogen Concentration ◽  
Type Ii ◽  
High Quality ◽  
Quality Type ◽  
Temperature Gradient Method ◽  
Large Diamond

With adopting Al as the nitrogen getter in Ni70Mn25Co5 or Fe55Ni29Co16 catalyst, High-quality type-Ⅱa large diamonds have been grown under the conditions of about 5.5GPa and 1580K by using the temperature gradient method. While Al(2.0wt%) is added in the Fe55Ni29Co16, the nitrogen concentration(Nc) in the diamond is less than 1ppm. While Al(4.0wt%) is added in the Ni70Mn25Co5, the Nc in the diamond is highly arrived at 48ppm. The different of solubility of nitrogen in both catalyst at high pressure and high temperature is the basic reason of the different effect of eliminating nitrogen of Al. It can be shown in experamentals that Al is a less efficient nitrogen getter in Ni70Mn25Co5 than in Fe55Ni29Co16. While Al(2.0wt%) is added in the Fe55Ni29Co16, the high-quality type-Ⅱa large diamond, in which nitrogen is less than 1ppm and which the size was arrived at 3.3mm, had grown by decreasing the growth rate of diamond.

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