Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes
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2005 ◽
Vol 8
(11)
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pp. G320
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2014 ◽
Vol 9
(4)
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pp. 549-553
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2012 ◽
Vol 51
(2R)
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pp. 020204
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Keyword(s):
2012 ◽
Vol 51
◽
pp. 020204
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