A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT
Keyword(s):
Sige Hbt
◽
1970 ◽
Vol 28
◽
pp. 440-441
1987 ◽
Vol 45
◽
pp. 328-329
1998 ◽
Vol 08
(PR2)
◽
pp. Pr2-63-Pr2-66
◽
2003 ◽
Vol 27
(4)
◽
pp. 303-306
◽