Collector optimization for improving the product of the breakdown voltage–cutoff frequency in SiGe HBT

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si-based RF bipolar transistors

physica status solidi (c) ◽

10.1002/pssc.200564126 ◽

2006 ◽

Vol 3 (3) ◽

pp. 494-498 ◽

Cited By ~ 2

Author(s):

Christian Schippel ◽

Jun Fu ◽

Frank Schwierz

Keyword(s):

Breakdown Voltage ◽

Cutoff Frequency ◽

Bipolar Transistors ◽

Dopant Profile

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Влияние технологии двойного травления под затвор на параметры HEMT транзисторов на подложках GaAs и InP

Физика и техника полупроводников ◽

10.21883/ftp.2021.10.51439.38 ◽

2021 ◽

Vol 55 (10) ◽

pp. 890

Author(s):

В.А. Беляков ◽

И.В. Макарцев ◽

А.Г. Фефелов ◽

С.В. Оболенский ◽

А.П. Васильев ◽

...

Keyword(s):

Integrated Circuits ◽

Breakdown Voltage ◽

Cutoff Frequency ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Electron Mobility Transistors ◽

Inp Substrate ◽

Current Voltage ◽

Unity Gain

High electron mobility transistors (HEMTs) have been developed based on InAlAs/InGaAs heterostructures on an InP substrate, with a transconductance of about 1000 mS/mm, a reverse breakdown voltage of more than 10 V and a unity-gain cutoff frequency is 140 GHz. In addition, HEMT transistors based on AlGaAs/InGaAs/GaAs heterostructures on a GaAs substrate with double gate recessing technology have been developed. This transistors demonstrate a maximum measured transconductance of the current-voltage characteristic of 520 mS/mm, a maximum drain current of 670 mA/mm, and a gate-drain breakdown voltage of 14 V and a unity-gain cut-off frequency is 120 GHz. Due to the increased breakdown voltage, the developed transistors have been used in monolithic integrated circuits of millimeter-wave power amplifiers with an output power of more than 110 mW.

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Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs

MRS Proceedings ◽

10.1557/proc-595-f99w11.13 ◽

1999 ◽

Vol 595 ◽

Author(s):

Maziar Farahmand ◽

Kevin F. Brennan

Keyword(s):

Monte Carlo ◽

Breakdown Voltage ◽

Cutoff Frequency ◽

Electron Velocity ◽

Wurtzite Phase ◽

Velocity Overshoot ◽

Density Of Electronic States ◽

Full Band ◽

Self Consistent ◽

Output Characteristics

AbstractThe output characteristics, cutoff frequency, breakdown voltage and the transconductance of wurtzite and zincblende phase GaN MESFETs have been calculated using a self-consistent, full band Monte Carlo simulation. It is found that the calculated breakdown voltage for the wurtzite device is considerably higher than that calculated for a comparable GaN zincblende phase device. The zincblende device is calculated to have a higher transconductance and cutoff frequency than the wurtzite device. The higher breakdown voltage of the wurtzite phase device is attributed to the higher density of electronic states for this phase compared to the zincblende phase. The higher cutoff frequency and transconductance of the zincblende phase GaN device is attributed to more appreciable electron velocity overshoot for this phase compared to that for the wurtzite phase. The maximum cutoff frequency and transconductance of a 0.1 μm gate-length zincblende GaN MESFET are calculated to be 220GHz and 210 mS/mm, respectively. The corresponding quantities for the wurtzite GaN device are calculated to be 160GHz and 158 mS/mm.

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SiGe HBT/BiCMOS Technologies and their Applications to Communication ICs/LSIs

MRS Proceedings ◽

10.1557/proc-809-b6.1 ◽

2004 ◽

Vol 809 ◽

Author(s):

Katsuya Oda ◽

Katsuyoshi Washio ◽

Takashi Hashimoto

Keyword(s):

High Speed ◽

Cutoff Frequency ◽

Clock Rate ◽

Sige Hbt ◽

Selective Epitaxial Growth ◽

Communications Systems ◽

Ultra High Speed ◽

Bicmos Technology ◽

Sige Bicmos ◽

Doping Profiles

ABSTRACTSelf-aligned ultra-high-speed SiGe HBTs were developed by using selective epitaxial growth (SEG) technology. The use of HCl-free SEG, incorporation of C, and optimization of doping profiles significantly improves the performance of the HBT, producing a transistor with a high cutoff frequency of 170 GHz and a maximum oscillation frequency of 204 GHz, for a minimum ECL gate delay time of 4.8 ps. This is applied in a 16:1 MUX with a maximum clock rate of 57 GHz. A 0.13-μm SiGe BiCMOS technology is also realized without any degradation of CMOS due to the high stability of SiGe HBTs. Furthermore, the structure of SiGe HBT is optimized for an emitter scaled down towards 100 nm, mainly through the use of a funnel-shaped emitter electrode to reduce both emitter and base resistances. High-speed operation of a static frequency divider demonstrates the advantage of SiGe HBTs for ultra-high-speed communications systems.

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